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The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS

Mutoh, S., Douseki, T., Matsuya, Y., Aoki, T., Shigematsu, S., Yamada, J.·1995·IEEE Journal of Solid-State Circuits

Abstract

1-V power supply high-speed low-power digital circuit technology with 0.5-/spl mu/m multithreshold-voltage CMOS (MTCMOS) is proposed. This technology features both low-threshold voltage and high-threshold voltage MOSFET's in a single LSI. The low-threshold voltage MOSFET's enhance speed performance at a low supply voltage of 1 V or less, while the high-threshold voltage MOSFET's suppress the stand-by leakage current during the sleep period. This technology has brought about logic gate characteristics of a 1.7-ns propagation delay time and 0.3-/spl mu/W/MHz/gate power dissipation with a standard load. In addition, an MTCMOS standard cell library has been developed so that conventional CAD tools can be used to lay out low-voltage LSI's. To demonstrate MTCMOS's effectiveness, a PLL LSI based on standard cells was designed as a carrying vehicle. 18-MHz operation at 1 V was achieved using a 0.5-/spl mu/m CMOS process.>

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Metadata

Authors
Mutoh, S., Douseki, T., Matsuya, Y., Aoki, T., Shigematsu, S., & Yamada, J.
Venue
IEEE Journal of Solid-State Circuits
Published
1995
Volume
30
Issue
8
Pages
847-854
ISSN
0018-9200 (ISSN-L)
OpenAlex
W2114621701
Cited by
1,123
References
2
FWCI
15.33
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: 1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS. https://app.cochat.ai/papers/10.1109/4.400426
The paper
Mutoh, S., Douseki, T., Matsuya, Y., Aoki, T., Shigematsu, S., & Yamada, J. (1995). 1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS. IEEE Journal of Solid-State Circuits. https://doi.org/10.1109/4.400426

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