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Power semiconductor device figure of merit for high-frequency applications
Abstract
A figure of merit (the Baliga high-frequency figure of merit) is derived for power semiconductor devices operating in high-frequency circuits. Using this figure of merit, it is predicted that the power losses incurred in the power device will increase as the square root of the operating frequency and approximately in proportion to the output power. By relating the device power dissipation to the intrinsic material parameters, it is shown that the power loss can be reduced by using semiconductors with larger mobility and critical electric field for breakdown. Examination of data in the literature indicates that significant performance improvement can be achieved by replacing silicon with gallium arsenide, silicon carbide, or semiconducting diamond.>
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Cited by
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Naik, G. V., Shalaev, V. M., & Boltasseva, A. (2013) · Advanced Materials · doi:10.1002/adma.201205076 · Cited by 2,373
Material Science and Device Physics in SiC Technology for High-Voltage Power Devices
Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Pearton, S. J., Ren, F., Tadjer, M., & Kim, J. (2018) · Journal of Applied Physics · doi:10.1063/1.5062841 · Cited by 659
Silicon carbide benefits and advantages for power electronics circuits and systems
Elasser, A., & Chow, T. P. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021562 · Cited by 537
Metadata
- Authors
- Baliga, B. J.
- Venue
- IEEE Electron Device Letters
- Published
- 1989-10
- Volume
- 10
- Issue
- 10
- Pages
- 455-457
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2103947167
- Cited by
- 1,070
- References
- 0
- FWCI
- 2.35
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Power semiconductor device figure of merit for high-frequency applications. https://app.cochat.ai/papers/10.1109/55.43098
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- Baliga, B. J. (1989). Power semiconductor device figure of merit for high-frequency applications. IEEE Electron Device Letters. https://doi.org/10.1109/55.43098
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
