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Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
Abstract
Quantum-mechanical modeling of electron tunneling current from the quantized inversion layer of ultra-thin-oxide (<40 /spl Aring/) nMOSFET's is presented, together with experimental verification. An accurate determination of the physical oxide thickness is achieved by fitting experimentally measured capacitance-versus-voltage curves to quantum-mechanically simulated capacitance-versus-voltage results. The lifetimes of quasibound states and the direct tunneling current are calculated using a transverse-resonant method. These results are used to project an oxide scaling limit of 20 /spl Aring/ before the chip standby power becomes excessive due to tunneling currents,.
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Cited by
Yuan, H., Shimotani, H., Tsukazaki, A., Ohtomo, A., Kawasaki, M., & Iwasa, Y. (2009) · Advanced Functional Materials · doi:10.1002/adfm.200801633 · Cited by 601
First-principles calculations of defects in oxygen-deficient silica exposed to hydrogen
Blöchl, P. E. (2000) · Physical Review B · doi:10.1103/physrevb.62.6158 · Cited by 401
Scaling the gate dielectric: Materials, integration, and reliability
Buchanan, D. A. (1999) · IBM Journal of Research and Development · doi:10.1147/rd.433.0245 · Cited by 367
Self-citationWang, H., & Mercier, P. P. (2017) · Scientific Reports · doi:10.1038/s41598-017-04705-6 · Cited by 43
Metadata
- Authors
- Lo, S.-H., Buchanan, D. A., Taur, Y., & Wang, W.
- Venue
- IEEE Electron Device Letters
- Published
- 1997-05
- Volume
- 18
- Issue
- 5
- Pages
- 209-211
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2145633302
- Cited by
- 814
- References
- 0
- FWCI
- 41.72
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's. https://app.cochat.ai/papers/10.1109/55.568766
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- Lo, S.-H., Buchanan, D. A., Taur, Y., & Wang, W. (1997). Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's. IEEE Electron Device Letters. https://doi.org/10.1109/55.568766
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