The DOI matches its Crossref record; 15 of the 15 references it cites were found in a registry or an index.
Elementary scattering theory of the Si MOSFET
Abstract
A simple one-flux scattering theory of the silicon MOSFET is introduced. Current-voltage (I-V) characteristics are expressed in terms of scattering parameters rather than a mobility. For long-channel transistors, the results reduce to conventional drift-diffusion theory, but they also apply to devices in which the channel length is comparable to or even shorter than the mean-free-path. The results indicate that for very short channels the transconductance is limited by carrier injection from the source. The theory also indicates that evaluation of the drain current in short-channel MOSFETs is a near-equilibrium transport problem, even though the channel electric field is large in magnitude and varies rapidly in space.
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Citations
Cites
Electronic Transport in Mesoscopic Systems
Datta, S. (1995) · doi:10.1017/cbo9780511805776 · Cited by 7,704
Spatial Variation of Currents and Fields Due to Localized Scatterers in Metallic Conduction
Landauer, R. (1957) · IBM Journal of Research and Development · doi:10.1147/rd.13.0223 · Cited by 3,459
Jacoboni, C., & Reggiani, L. (1983) · Reviews of Modern Physics · doi:10.1103/revmodphys.55.645 · Cited by 2,300
Carrier mobilities in silicon empirically related to doping and field
Caughey, D. M., & Thomas, R. E. (1967) · Proceedings of the IEEE · doi:10.1109/proc.1967.6123 · Cited by 1,733
(1962) · Elsevier eBooks · doi:10.1016/c2013-0-01678-7 · Cited by 1,406
Spatial variation of currents and fields due to localized scatterers in metallic conduction
Landauer, R. (1988) · IBM Journal of Research and Development · doi:10.1147/rd.323.0306 · Cited by 1,042
Threshold voltage model for deep-submicrometer MOSFETs
Liu, Z.-H., Hu, C. C., Huang, J., Chan, T. Y., Jeng, M.-C., Ko, P. K., & Cheng, Y. (1993) · IEEE Transactions on Electron Devices · doi:10.1109/16.249429 · Cited by 482
Alternative Approach to the Solution of Added Carrier Transport Problems in Semiconductors
McKelvey, J. P., Longini, R. L., & Brody, T. P. (1961) · Physical Review · doi:10.1103/physrev.123.51 · Cited by 142
Monte-Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 K
Laux, S. E., & Fischetti, M. V. (1988) · IEEE Electron Device Letters · doi:10.1109/55.6947 · Cited by 129
Effects of microscopic fluctuations in dopant distributions on MOSFET threshold voltage
Nishinohara, K. T., Shigyo, N., & Wada, T. (1992) · IEEE Transactions on Electron Devices · doi:10.1109/16.123489 · Cited by 116
Cited by
Theory of ballistic nanotransistors
Rahman, A., Guo, J., Datta, S., & Lundstrom, M. S. (2003) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2003.815366 · Cited by 769
Self-citationEssential physics of carrier transport in nanoscale MOSFETs
Lundstrom, M., & Ren, Z. (2002) · IEEE Transactions on Electron Devices · doi:10.1109/16.974760 · Cited by 554
Self-citationTwo-dimensional quantum mechanical modeling of nanotransistors
Svizhenko, A., Anantram, M. P., Govindan, T. R., Biegel, B., & Venugopal, R. (2002) · Journal of Applied Physics · doi:10.1063/1.1432117 · Cited by 458
Black phosphorus and its isoelectronic materials
Xia, F., Wang, H., Hwang, J. C. M., Neto, A. H. C., & Yang, L. (2019) · Nature Reviews Physics · doi:10.1038/s42254-019-0043-5 · Cited by 322
Metadata
- Authors
- Lundstrom, M.
- Venue
- IEEE Electron Device Letters
- Published
- 1997-07
- Volume
- 18
- Issue
- 7
- Pages
- 361-363
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2151532256
- Cited by
- 586
- References
- 15
- FWCI
- 8.54
- Type
- journal article
- Language
- en
- Open access
- closed
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Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
