The DOI matches its Crossref record; 27 of the 27 references it cites were found in a registry or an index.
Theory of ballistic nanotransistors
Abstract
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional (2-D) electrostatic effects are small (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to Natori's theory of the ballistic MOSFET. The model also treats 2-D electrostatics and the quantum capacitance limit where the semiconductor quantum capacitance is much less than the insulator capacitance. This new model provides insights into the performance of MOSFETs near the scaling limit and a unified framework for assessing and comparing a variety of novel transistors.
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Citations
Cites
Electronic Transport in Mesoscopic Systems
Datta, S. (1995) · doi:10.1017/cbo9780511805776 · Cited by 7,704
Self-citationPhysical Properties of Carbon Nanotubes
Saito, R., Dresselhaus, G., & Dresselhaus, M. S. (1998) · IMPERIAL COLLEGE PRESS eBooks · doi:10.1142/9781860943799 · Cited by 4,808
Carbon Nanotubes as Schottky Barrier Transistors
Heinze, S., Tersoff, J., Martel, R., Derycke, V., Appenzeller, J., & Avouris, P. (2002) · Physical Review Letters · doi:10.1103/physrevlett.89.106801 · Cited by 1,270
Nanoscale device modeling: the Green’s function method
Datta, S. (2000) · Superlattices and Microstructures · doi:10.1006/spmi.2000.0920 · Cited by 1,217
Self-citationSingle-walled carbon nanotube electronics
McEuen, P. L., Fuhrer, M. S., & Park, H. (2002) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2002.1005429 · Cited by 1,209
Luryi, S. (1988) · Applied Physics Letters · doi:10.1063/1.99649 · Cited by 932
Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes
Wind, S. J., Appenzeller, J., Martel, R., Derycke, V., & Avouris, P. (2002) · Applied Physics Letters · doi:10.1063/1.1480877 · Cited by 668
Universal Density of States for Carbon Nanotubes
Mintmire, J. W., & White, C. T. (1998) · Physical Review Letters · doi:10.1103/physrevlett.81.2506 · Cited by 630
Ballistic metal-oxide-semiconductor field effect transistor
Natori, K. (1994) · Journal of Applied Physics · doi:10.1063/1.357263 · Cited by 612
Elementary scattering theory of the Si MOSFET
Lundstrom, M. (1997) · IEEE Electron Device Letters · doi:10.1109/55.596937 · Cited by 586
Self-citation
Cited by
Ballistic carbon nanotube field-effect transistors
Javey, A., Guo, J., Wang, Q., Lundstrom, M., & Dai, H. (2003) · Nature · doi:10.1038/nature01797 · Cited by 3,187
Self-citationPerformance Limits of Monolayer Transition Metal Dichalcogenide Transistors
Liu, L., Kumar, S. B., Ouyang, Y., & Guo, J. (2011) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2011.2159221 · Cited by 502
Self-citationNanowire Electronics: From Nanoscale to Macroscale
Jia, C., Lin, Z., Huang, Y., & Duan, X. (2019) · Chemical Reviews · doi:10.1021/acs.chemrev.9b00164 · Cited by 373
Metadata
- Authors
- Rahman, A., Guo, J., Datta, S., & Lundstrom, M. S.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2003-09
- Volume
- 50
- Issue
- 9
- Pages
- 1853-1864
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2098874598
- Cited by
- 769
- References
- 27
- FWCI
- 22.79
- Type
- journal article
- Language
- en
- Open access
- closed
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
