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On Backscattering and Mobility in Nanoscale Silicon MOSFETs

Jeong, C., Antoniadis, D. A., & Lundstrom, M. (2009) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2009.2030844 · Cited by 49 · see citing works

Analytical modeling and doping optimization for enhanced analog performance in a Ge/Si interfaced nanowire MOSFET

Das, A., Rewari, S., Kanaujia, B. K., Deswal, S. S., & Gupta, R. S. (2023) · Physica Scripta · doi:10.1088/1402-4896/acde16 · Cited by 49 · see citing works

Device and Circuit Design Challenges in the Digital Subthreshold Region for Ultralow-Power Applications

Vaddi, R., Dasgupta, S., & Agarwal, R. (2009) · VLSI design · doi:10.1155/2009/283702 · Cited by 48 · see citing works

Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs

Rogdakis, K., Poli, S., Bano, E., Zekentes, K., & Pala, M. G. (2009) · Nanotechnology · doi:10.1088/0957-4484/20/29/295202 · Cited by 48 · see citing works

III-V/Ge MOS device technologies for low power integrated systems

Takagi, S., Noguchi, M., Kim, M., Kim, S.-H., Chang, C., Yokoyama, M., Nishi, K., Zhang, R., Ke, M., & Takenaka, M. (2016) · Solid-State Electronics · doi:10.1016/j.sse.2016.07.002 · Cited by 48 · see citing works

Analysis of Carrier Transport in Short-Channel MOSFETs

Majumdar, A., & Antoniadis, D. A. (2014) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2013.2294380 · Cited by 47 · see citing works

A New Backscattering Model Giving a Description of the Quasi-Ballistic Transport in Nano-MOSFET

Fuchs, E., Dollfus, P., Lecarval, G., Barraud, S., Villanueva, D., Salvetti, F., Jaouen, H., & Skotnicki, T. (2005) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2005.856181 · Cited by 46 · see citing works

Influence of Bandstructure and Channel Structure on the Inversion Layer Capacitance of Silicon and GaAs MOSFETs

Pal, H. S., Cantley, K. D., Ahmed, S., & Lundstrom, M. (2008) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2007.914830 · Cited by 45 · see citing works

Quasi-Ballistic Transport in Nanowire Field-Effect Transistors

Gnani, E., Gnudi, A., Reggiani, S., & Baccarani, G. (2008) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2008.2005178 · Cited by 44 · see citing works

Insight Into Ballisticity of Room-Temperature Carrier Transport in Carbon Nanotube Field-Effect Transistors

Xu, L., Qiu, C., Zhao, C., Zhang, Z., & Peng, L. (2019) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2019.2920846 · Cited by 44 · see citing works

Performance Comparison of GaSb, Strained-Si, and InGaAs Double-Gate Ultrathin-Body n-FETs

Luisier, M. (2011) · IEEE Electron Device Letters · doi:10.1109/led.2011.2168377 · Cited by 43 · see citing works

Experimental Investigation on the Quasi-Ballistic Transport: Part I—Determination of a New Backscattering Coefficient Extraction Methodology

Barral, V., Poiroux, T., Saint-Martin, J., Munteanu, D., Autran, J., & Deleonibus, S. (2009) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2008.2011681 · Cited by 43 · see citing works

Performance Analysis of 60-nm Gate-Length III–V InGaAs HEMTs: Simulations Versus Experiments

Neophytou, N., Rakshit, T., & Lundstrom, M. (2009) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2009.2021437 · Cited by 42 · see citing works

Monte Carlo simulation and measurement of nanoscale n-MOSFETs

Bufler, F. M., Asahi, Y., Yoshimura, H., Zechner, C., Schenk, A., & Fichtner, W. (2003) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2002.808420 · Cited by 42 · see citing works

Kinetics of Quasiballistic Transport in Nanoscale Semiconductor Structures: Is the Ballistic Limit Attainable at Room Temperature?

Sano, N. (2004) · Physical Review Letters · doi:10.1103/physrevlett.93.246803 · Cited by 41 · see citing works

Quantum simulations of an ultrashort channel single-gated n-MOSFET on SOI

Knoch, J., Lengeler, B., & Appenzeller, J. (2002) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2002.1013278 · Cited by 41 · see citing works

Carbon Nanotube Electronics: Modeling, Physics, and Applications

Guo, J. H. (2006) · Purdue e-Pubs (Purdue University System) · Cited by 41 · see citing works

Physics of Carrier Backscattering in One- and Two-Dimensional Nanotransistors

Kim, R., & Lundstrom, M. (2008) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2008.2008368 · Cited by 40 · see citing works

Terahertz Plasmonic Technology

Shur, M. S. (2020) · IEEE Sensors Journal · doi:10.1109/jsen.2020.3022809 · Cited by 40 · see citing works

Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport

Querlioz, D., Nguyen, H.-N., Saint-Martin, J., Bournel, A., Galdin-Retailleau, S., & Dollfus, P. (2009) · Journal of Computational Electronics · doi:10.1007/s10825-009-0281-3 · Cited by 40 · see citing works

On the physical understanding of the kT-layer concept in quasi-ballistic regime of transport in nanoscale devices

Clerc, R., Palestri, P., & Selmi, L. (2006) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2006.876387 · Cited by 40 · see citing works

Few electron devices: towards hybrid CMOS-SET integrated circuits

Ionescu, A. M., Declercq, M. J., Mahapatra, S., Banerjee, K., & Gautier, J. (2002) · ACM/IEEE Design Automation Conference (DAC) · doi:10.1109/dac.2002.1012600 · Cited by 40 · see citing works

Essential Physics of Carrier Transport in

Mosfets, N., Lundstrom, M., & Ren, Z. (2014)

Simulation of nanoscale MOSFETs: a scattering theory interpretation

Ren, Z., & Lundstrom, M. (2000) · Superlattices and Microstructures · doi:10.1006/spmi.1999.0798 · Cited by 38 · see citing works

Nanoscale MOSFETs scaling

Naveh, Y., Sverdlov, V. A., & Likharev, K. K. (2002) · Conference digest · doi:10.1109/drc.2001.937872 · Cited by 2 · see citing works

Physics of carrier-transport mechanisms and ultra-small scale phenomena for theoretical modelling of nanometer MOS transistors from diffusive to ballistic regimes of operation

Khanna, V. K. (2004) · Physics Reports · doi:10.1016/j.physrep.2004.04.003 · Cited by 24 · see citing works

Quantum modeling of nanoscale MOSFET

Shanbhag, K. R., & Subramaniam, P. C. (2007) · International Workshop on Physics of Semiconductor Devices · doi:10.1109/iwpsd.2007.4472495 · Cited by 1 · see citing works