The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Etch rates for micromachining processing
Abstract
The etch rates for 317 combinations of 16 materials (single-crystal silicon, doped, and undoped polysilicon, several types of silicon dioxide, stoichiometric and silicon-rich silicon nitride, aluminum, tungsten, titanium, Ti/W alloy, and two brands of positive photoresist) used in the fabrication of microelectromechanical systems and integrated circuits in 28 wet, plasma, and plasmaless-gas-phase etches (several HF solutions, H/sub 3/PO/sub 4/, HNO/sub 3/+H/sub 2/O+NH/sub 4/F, KOH, Type A aluminum etchant, H/sub 2/O+H/sub 2/O/sub 2/+HF, H/sub 2/O/sub 2/, piranha, acetone, HF vapor, XeF/sub 2/, and various combinations of SF/sub 6/, CF/sub 4/, CHF/sub 3/, Cl/sub 2/, O/sub 2/, N/sub 2/, and He in plasmas) were measured and are tabulated. Etch preparation, use, and chemical reactions (from the technical literature) are given. Sample preparation and MEMS applications are described for the materials.
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Citations
Cites
Principles of Plasma Discharges and Materials Processing
Lieberman, M. A., & Lichtenberg, A. J. (2005) · doi:10.1002/0471724254 · Cited by 4,748
Cited by
Bulk micromachining of silicon
Kovacs, G. T. A., Maluf, N. I., & Petersen, K. E. (1998) · Proceedings of the IEEE · doi:10.1109/5.704259 · Cited by 733
Metadata
- Authors
- Williams, K. R., & Muller, R. S.
- Venue
- Journal of Microelectromechanical Systems
- Published
- 1996
- Volume
- 5
- Issue
- 4
- Pages
- 256-269
- ISSN
- 1057-7157 (ISSN-L)
- OpenAlex
- W2110070104
- Cited by
- 646
- References
- 1
- FWCI
- 7.28
- Type
- journal article
- Language
- en
- Open access
- closed
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- Williams, K. R., & Muller, R. S. (1996). Etch rates for micromachining processing. Journal of Microelectromechanical Systems. https://doi.org/10.1109/84.546406
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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