The DOI matches its Crossref record.
Dynamic gate resistance control for current balancing in parallel connected IGBTs
Abstract
In high power applications, switching devices such as MOSFETs and IGBTs must often be connected in parallel in order to provide higher current capability. However, the current imbalance of parallel connected IGBTs due to stray inductance, variations in device characteristics and asymmetric PCB layout, necessitates de-rating of the IGBTs. This deliberate de-rating is required in order to ensure the IGBTs function within their Safe-Operating-Area. Unfortunately, de-rating also leads to an increase in cost, size and complexity of the overall power electronics system. A current balancing method for parallel connected IGBTs using a dynamically adjustable gate driving resistance (Rg_dyanmic) is presented in this paper. Experimental results are achieved by measuring the current distribution between two parallel connected IGBTs (rated at 600V, 90A). These experimental results indicate an improvement in average current imbalance of 74% and 65% for the turn on and off periods, respectively.
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In the citing paper
“The dynamic adjustment of V GE can be realized through dynamic R G control.”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [52]
In the citing paper
“Furthermore, turn-on and turn-off delay time parameters can also be controlled by dynamic resistance control.”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [52]
In the citing paper
“The dynamic R G control is presented and implemented in [52,53] for parallel-connected IGBTs to realize dynamic V GE adjustment.”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [52]
Citations
Cites
No references could be resolved yet.
Research works printed but not linked: 9
- 10.1109/PESC.1996.548751 · DOI · Paper page
- 10.1109/ISPSD.1998.702645 · DOI
- 0, Fuji IGBT module application manual, 81
- 10.1109/ECCE.2011.6064173 · DOI · Paper page
- 10.1109/ICIT.2010.5472617 · DOI · Paper page
- 10.1109/TPS.2008.2003971 · DOI · Paper page
- 10.1109/63.761687 · DOI
- 10.1109/ISPSD.2006.1666099 · DOI
- onozawa, 2005, Great improvement in turn-on power dissipation of IGBTs with an extra gate charging function, International Symposium on Power Semiconductor Devices and ICs, 207
Cited by
Paralleling of IGBT Power Semiconductor Devices and Reliability Issues
Tripathi, R. N., & Omura, I. (2023) · Electronics · doi:10.3390/electronics12183826 · Cited by 14
An Effective Current Balancing Method for Inverters With Paralleled Silicon Carbide Power Modules
Lin, N., Zhao, Y., & Mantooth, H. A. (2023) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2023.3306750 · Cited by 13
Metadata
- Authors
- Sasaki, M., Nishio, H., & Ng, W. T.
- Venue
- 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
- Publisher
- IEEE
- Published
- 2013-03
- Pages
- 244-249
- Cited by
- 53
- References
- 0
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.