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Cited by 16

The DOI matches its Crossref record.

Simulation and experimental investigation of parallel connected IGBTs

Alvarez, Rodrigo, Fink, Karsten, Bernet, Steffen·2010·2010 IEEE International Conference on Industrial Technology
DOI 10.1109/icit.2010.5472617
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Abstract

The increasing demand for large power ratings and the physically limited maximum current density of semiconductor devices in power electronics make the connection of semiconductor in parallel or series an interesting alternative for high power applications. The major problem of the IGBT parallel connection is the current unbalance of parallel devices, which requires the selection of the devices, a manual parameterization of gate units and a substantial device derating in state of the art high power IGBT Voltage Source Converters. This paper presents a new scheme for the non-destructive parameter extraction of IGBTs and a simulative study of the influence of different parameters on the current distribution of parallel connected IGBTs. The investigations show that the delay time of parallel switched IGBTs can be used to achieve a balanced current distribution despite potentially varying parameters like gate-emitter threshold voltages and internal gate resistances. The results are experimentally verified by measurements in a 500 V, 800A test set-up applying 1700V, 450 A IGBTs and inverse diodes.

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Research works printed but not linked: 19

  1. 10.1109/PESC.1996.548751 · DOI · Paper page
  2. 10.1109/PESC.1996.548815 · DOI
  3. 10.1109/63.761687 · DOI
  4. zhou, 2001, A practical series connection technique for multiple igbt devices, Power Electronics Specialists Conf 2001 PESC 2001 IEEE 32nd Annual, 4, 2151, 10.1109/PESC.2001.954438 · DOI
  5. 10.1109/PPPS.2007.4652431 · DOI
  6. didier, 2006, Numerical simulations for electromagnetic power module design, Proc 18th Int Symp Power Semicond Devices ICs
  7. 10.1109/PESC.1998.703414 · DOI
  8. 10.1109/63.321038 · DOI
  9. 10.1109/63.60690 · DOI
  10. 10.1109/IECON.1996.566015 · DOI · Paper page
  11. yang, 2005, investigation of parallel connection of igbts, 2005 International Conference on Electrical Machines and Systems ICEMS-05, 1, 833, 10.1109/ICEMS.2005.202654 · DOI
  12. 10.1109/EPE.2005.219697 · DOI
  13. 10.1109/28.821809 · DOI
  14. 10.1109/IECON.2002.1187568 · DOI
  15. 10.1109/ISCAS.2001.921248 · DOI
  16. 10.1109/IAS.2002.1042811 · DOI · Paper page
  17. 10.1109/IAS.1998.730343 · DOI
  18. wang, 2003, Controlled switching of high voltage igbts in series, 2003 IEEE Conf Electron Dev & Solid-State Circuits, 297, 10.1109/EDSSC.2003.1283535 · DOI
  19. tschirley, 2005, Automated testing of high power semiconductor devices, Proc of International Conference on Power Electronics and Intelligent Control for Energy Conservation

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Metadata

Authors
Alvarez, R., Fink, K., & Bernet, S.
Venue
2010 IEEE International Conference on Industrial Technology
Publisher
IEEE
Published
2010
Pages
824-831
DOI
10.1109/icit.2010.5472617
Cited by
16
References
0

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CoChat. (2026). Citation check: Simulation and experimental investigation of parallel connected IGBTs. https://app.cochat.ai/papers/10.1109/icit.2010.5472617
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Alvarez, R., Fink, K., & Bernet, S. (2010). Simulation and experimental investigation of parallel connected IGBTs. 2010 IEEE International Conference on Industrial Technology. https://doi.org/10.1109/icit.2010.5472617

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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.