Paralleling GaN E-HEMTs in 10kW–100kW systems
Abstract
Industry is adopting GaN HEMT in 10kW–100kW and higher power systems due to the ultra-fast switching capabilities of GaN. Paralleling GaN HEMT transistors is an appealing idea to further increase the power capability and reduce conduction losses of systems. The characteristics of E-mode GaN HEMT, such as positive temperature coefficient of RDS(ON) and a temperature independent threshold voltage, are very suitable for paralleling devices. However, the main challenge for parallel operation is thought to be the diverse parasitics of the power stage and gate driver circuits, which are very sensitive to the high di/dt and dv/dt during the switching process. In this paper, an analytic model for the switching process of paralleled GaN HEMT transistors is built to analyze the effects of parasitics and device characteristics on paralleling, and the design consideration for gate driver and layout is also presented. A half bridge power stage consisting of four high-side and four low-side 60 A / 650 V GaN HEMTs in parallel is designed to undertake 240 A / 400 V hard switching on and off. Double pulse testing results are presented to confirm GaN paralleling capability.
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The cost of WBG devices is expected to further decrease, which will help broaden their use in cost-competitive applications such as the automotive industry.
“Moreover, it is expected that the cost of WBG devices will further decrease, which will help broaden their use in cost-competitive applications such as the automotive industry.”
From A Review of Bidirectional On-Board Chargers for Electric Vehicles (2021) · cites this paper as [143]
Although WBG devices currently have a higher cost, it is expected that the price will decrease as the production rises.
“Although WBG devices currently have a higher cost, it is expected that the price will decrease as the production rises [143], [144].”
From A Review of Bidirectional On-Board Chargers for Electric Vehicles (2021) · cites this paper as [143]
Cites
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Analytical Loss Model of High Voltage GaN HEMT in Cascode Configuration
Huang, X., Li, Q., Liu, Z., & Lee, F. C. (2013) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2267804 · Cited by 294 · see citing works
Design considerations for GaN HEMT multichip halfbridge module for high-frequency power converters
Luo, F. L., Chen, Z., Xue, L. L., Mattavelli, P., Boroyevich, D., & Hughes, B. (2014) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec.2014.6803361 · Cited by 71 · see citing works
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Self-citationAn optimized layout with low parasitic inductances for GaN HEMTs based DC-DC converter
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Lu, J. L., Bai, H. K., Averitt, S., et al. (2015) · IEEE Workshop on Wide Bandgap Power Devices and Applications · doi:10.1109/wipda.2015.7369254 · Cited by 26 · see citing works
Self-citationUltra-low inductance phase leg design for GaN-based three-phase motor drive systems
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Global Trends in High-Power On-Board Chargers for Electric Vehicles
Khaligh, A., & D'Antonio, M. (2019) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2019.2897050 · Cited by 652 · see citing works
A Review of Bidirectional On-Board Chargers for Electric Vehicles
Yuan, J., Dorn-Gomba, L., Callegaro, A. D., Reimers, J., & Emadi, A. (2021) · IEEE Access · doi:10.1109/access.2021.3069448 · Cited by 390 · see citing works
“Although WBG devices currently have a higher cost, it is expected that the price will decrease as the production rises [143], [144].”
BackgroundA Review of High-Speed GaN Power Modules: State of the Art, Challenges, and Solutions
Emon, A. I., Mustafeez-ul-Hassan, Mirza, A. B., Kaplun, J., Vala, S. S., & Luo, F. (2023) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2022.3232265 · Cited by 151 · see citing works
- Authors
- Lu, J. L., & Chen, D.
- Venue
- 2017 IEEE Applied Power Electronics Conference and Exposition (APEC)
- Publisher
- IEEE
- Published
- 2017-03
- Pages
- 3049-3056
- ISSN
- 1048-2334 (ISSN-L)
- OpenAlex
- W2615126594
- Cited by
- 73
- References
- 9
- Citations by year
- 2026: 3 · 2025: 7 · 2024: 9 · 2023: 3 · 2022: 4 · 2021: 15 · 2020: 8 · 2019: 12 · 2018: 10 · 2017: 2
- FWCI
- 12.38
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Power Amplifier Design
- Keywords
- GaN HEMT, high-power electronics, parasitic effects, gate driver design, layout design, switching characteristics, hard switching, double-pulse testing, threshold voltage, conduction loss reduction
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