The DOI matches its Crossref record; 11 of the 11 references it cites were found in a registry or an index.
An Embedded GaN Power Module with Double-Sided Cooling and High-Density Integration
Abstract
In this paper, an embedded GaN half-bridge power module with double-sided cooling, low inductance, low thermal resistance, on-package decoupling capacitors, localized common mode filter, and integrated gate drivers is proposed. The two GaN dies are embedded in a printed circuit board (PCB) with heat dissipation paths to a ceramic substrate from both sides of the devices to achieve double-sided cooling capability. Thermal and electrical performance are fully analyzed and optimized. A low-cost module assembly procedure is presented utilizing standard layer attaching process. Finally, a compact$\mathbf{2.7}\ \mathbf{cm} \times \mathbf{1.8}\ \mathbf{cm}$half-bridge GaN power module is fabricated to verify both electrical and thermal performance through experiments. The switching performance of the power module is tested under 400 V/25 A double-pulse test that shows the power loop inductance is as low as 1.03 nH and the overshoot voltage of the switching waveform is less than 5% of the dc bus voltage. The thermal resistance is verified to be 0.32 K/W, and the fabricated power module is employed in a buck converter with 500 W output power at 600 kHz switching frequency.
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Embedded packaging provides inherent electromagnetic interference shielding and significantly improves robustness against thermal cycling and electrical overstress.
“The embedded paradigm also provides inherent electromagnetic interference (EMI) shielding and significantly improves robustness against thermal cycling and electrical overstress [29,45-49].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [48]
Embedded packaging places power dies inside the printed circuit board, which lowers parasitic inductance and capacitance, reduces package height, and creates an efficient vertical thermal path.
“Embedded packaging places power dies inside the printed circuit board (PCB), which lowers parasitic inductance/capacitance, reduces package height, and creates an efficient vertical thermal path.”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [48]
Citations
Cites
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
Jones, E. A., Wang, F. F., & Costinett, D. (2016) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2016.2582685 · Cited by 1,259
A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices
Jørgensen, A. B., Bęczkowski, S., Uhrenfeldt, C., et al. (2018) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2018.2845538 · Cited by 106
Wide bandgap semiconductor power devices for energy efficient systems
Chow, T. P. (2015) · IEEE Workshop on Wide Bandgap Power Devices and Applications · doi:10.1109/wipda.2015.7369328 · Cited by 88
A high power-density and high efficiency insulated metal substrate based GaN HEMT power module
Lu, J. L., Chen, D., & Yushyna, L. (2017) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2017.8096647 · Cited by 72
Design considerations for GaN HEMT multichip halfbridge module for high-frequency power converters
Luo, F. L., Chen, Z., Xue, L. L., Mattavelli, P., Boroyevich, D., & Hughes, B. (2014) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec.2014.6803361 · Cited by 71
Gallium Nitride Semiconductors in Power Electronics for Electric Vehicles: Advantages and Challenges
Letellier, A., Dubois, M. R., Trovão, J. P. F., et al. (2015) · IEEE Vehicle Power and Propulsion Conference (VPPC) · doi:10.1109/vppc.2015.7352955 · Cited by 46
PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link Capacitors
Mönch, S., Reiner, R. S., Waltereit, P., et al. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3005621 · Cited by 41
Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
Emon, A. I., Carlton, H., Harris, J., Krone, A., Hassan, M. U., Mirza, A. B., Hossain, M. M., Rashid, A. U., Chen, Y., Luo, F. L., et al. (2022) · IEEE Transactions on Transportation Electrification · doi:10.1109/tte.2022.3173585 · Cited by 34
GaN-Based Multichip Half-Bridge Power Module Integrated on High-Voltage AlN Ceramic Substrate
Kuring, C., Wolf, M., Geng, X., et al. (2022) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2022.3172659 · Cited by 28
A Double-Sided Cooling 650V/30A GaN Power Module with Low Parasitic Inductance
Wang, K., Li, B., Zhu, H., et al. (2020) · IEEE Applied Power Electronics Conference and Exposition (APEC) · doi:10.1109/apec39645.2020.9124425 · Cited by 24
In-Package Common-Mode Filter for GaN Power Module with Improved Radiated EMI Performance
Jia, N., Tian, X., Xue, L. L., et al. (2022) · IEEE Applied Power Electronics Conference and Exposition (APEC) · doi:10.1109/apec43599.2022.9773764 · Cited by 19
Self-citation
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Research works printed but not linked: 2
- 0, Eicedriver 1ednx550 datasheet
- 0, SMD291SNL10T4 datasheet
Cited by
Sorted by citations
Han, G., Kim, J., Park, S., & Bae, W. (2025) · Electronics · doi:10.3390/electronics14214193 · Cited by 34
Metadata
- Authors
- Tian, X., Jia, N., Chertkovsky, D. B., Sun, J., Bai, H., Tolbert, L. M., & Cui, H.
- Affiliations
- University of Tennessee at Knoxville (US)
- Venue
- 2022 IEEE Energy Conversion Congress and Exposition (ECCE)
- Publisher
- IEEE
- Published
- 2022-10-09
- Pages
- 1-7
- OpenAlex
- W4310502163
- Cited by
- 15
- References
- 11
- Citations by year
- 2025: 4 · 2024: 5 · 2023: 6
- FWCI
- 6.07
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- IEEE Energy Conversion Congress and Exposition (ECCE) (publishedVersion)
- Funders
- US DOE (2014-0654-85)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced DC-DC Converters
- Keywords
- double-sided cooling, half-bridge converter, printed circuit board packaging, thermal resistance, power loop inductance, common-mode filter, integrated gate driver, ceramic substrates, buck converter, high-density integration
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