The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Study and Application of Nano Copper Sintering Technology in Power Electronics Packaging
Abstract
Nano-metal sintering has been proven to be a promising die attachment technology for power electronics packaging in the high-end application. Compared with nano silver technology, it is believed that copper-based sintering technology has better cost and performance superiority, and thus has more potential to be utilized in the industry in the future. However, most of the current developed nano copper sintering material and technology shows bad performance with high sintering energy input. In this study, a novel nano-copper based paste has been developed with excellent process ability (sinterable below 280°C for 10 min with low pressure assisted) and good material property (over 40 MPa shear strength), which turns out to be suitable for the state-of-the-art packaging process. Then the material was applied into a SiC power module packaging scenario which shows comparable performance as silver sintering. The whole process only consumed less than 0.5h for each batch, which indicates that the copper sintering technology has great potential for the packaging application in high power situation.
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“Copper-sintered joints offer comparable performance with improved EM resistance, though oxidation control and process windows remain nontrivial [1-3,31,36-38].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [37]
Citations
Cites
A Survey of Wide Bandgap Power Semiconductor Devices
Millán, J., Godignon, P., Perpiñà, X., Pérez-Tomás, A., & Rebollo, J. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2268900 · Cited by 2,685
Lu, G., Calata, J. N., Lei, G., et al. (2007) · doi:10.1109/esime.2007.360066 · Cited by 71
A Review of the More Electric Aircraft Power Electronics
Rahrovi, B., & Ehsani, M. (2019) · IEEE Texas Power and Energy Conference (TPEC) · doi:10.1109/tpec.2019.8662158 · Cited by 62
Investigation on fatigue behavior of single SnAgCu/SnPb solder joint by rapid thermal cycling
Chen, J., Yin, Y., Ye, J., et al. (2015) · Soldering and Surface Mount Technology · doi:10.1108/ssmt-05-2014-0010 · Cited by 34
Power electronics for potential distribution dc power evolution: A review
Mai, T.-D., den Broeck, G. V., Pevere, A., et al. (2016) · IEEE International Energy Conference (ENERGYCON) · doi:10.1109/energycon.2016.7513923 · Cited by 9
Flagged first, then by citations
Research works printed but not linked: 1
- friedrichs, 2016, The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors, Bodo's Power
Cited by
Sorted by citations
Han, G., Kim, J., Park, S., & Bae, W. (2025) · Electronics · doi:10.3390/electronics14214193 · Cited by 34
Metadata
- Authors
- Liu, X., Zhou, Q., Zhao, X., Koh, S. W., Ye, H., & Zhang, G.
- Affiliations
- Delft University of Technology (NL)
- Chongqing University (CN)
- Huawei Technologies (China) (CN)
- Southern University of Science and Technology (CN)
- Venue
- 2021 IEEE 71st Electronic Components and Technology Conference (ECTC)
- Publisher
- IEEE
- Published
- 2021-06
- Pages
- 1928-1932
- ISSN
- 2766-8401 (ISSN-L)
- OpenAlex
- W3190073289
- Cited by
- 12
- References
- 5
- Citations by year
- 2026: 1 · 2025: 4 · 2024: 4 · 2023: 1 · 2022: 2
- FWCI
- 2.75
- Type
- conference paper
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Electronic Components and Technology Conference (ECTC) (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electronic Packaging and Soldering Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › 3D IC and TSV technologies
- Physical Sciences › Engineering › Mechanical Engineering › Powder Metallurgy Techniques and Materials
- Keywords
- die attach, power electronics packaging, low-temperature sintering, low-pressure sintering, shear strength, SiC power modules
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