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Cited by 356

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Generalized guide for MOSFET miniaturization

Brews, J.R., Fichtner, W., Nicollian, E.H., Sze, S.M.·1980·IEEE Electron Device Letters

Abstract

As MOSFET dimensions are reduced, lower voltages, shallower junctions, thinner oxides, and heavier doping help to maintain long-channel behavior. A simple, empirical relation has been found between these parameters and the minimum channel length for which long-channel subthreshold behavior will be observed. This approximate relation provides an estimate for MOSFET parameters not requiring reduction of all dimensions by the same scale factor.

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Metadata

Authors
Brews, J. R., Fichtner, W., Nicollian, E. H., & Sze, S. M.
Venue
IEEE Electron Device Letters
Published
1980-01
Volume
1
Issue
1
Pages
2-4
ISSN
0741-3106 (ISSN-L)
OpenAlex
W2099478375
Cited by
356
References
0
FWCI
21.21
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Generalized guide for MOSFET miniaturization. https://app.cochat.ai/papers/10.1109/edl.1980.25205
The paper
Brews, J. R., Fichtner, W., Nicollian, E. H., & Sze, S. M. (1980). Generalized guide for MOSFET miniaturization. IEEE Electron Device Letters. https://doi.org/10.1109/edl.1980.25205

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.