The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.
A functional MOS transistor featuring gate-level weighted sum and threshold operations
Open accessAbstract
A functional MOS transistor is proposed which works more intelligently than a mere switching device. The functional transistor calculates the weighted sum of all input signals at the gate level, and controls the 'on' and 'off' of the transistor based on the result of such a weighted sum operation. Since the function is quite analogous to that of biological neurons, the device is named a neuron MOSFET, or neuMOS (vMOS). The device is composed of a floating gate and multiples of input gates that capacitively interact with the floating gate. As the gate-level sum operation is performed in a voltage mode utilizing the capacitive coupling effect, essentially no power dissipation occurs in the calculation, making the device ideal for ULSI implementation. The basic characteristics of neuron MOSFETs as well as of simple circuit blocks are analyzed based on a simple transistor model and experiments. Making use of its very powerful function, a number of interesting circuit applications are explored. A soft hardware logic circuit implemented by neuMOS transistors is also proposed.>
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Cites
A logical calculus of the ideas immanent in nervous activity
McCulloch, W. S., & Pitts, W. (1943) · The Bulletin of Mathematical Biophysics · doi:10.1007/bf02478259 · Cited by 18,566
Design of ion-implanted MOSFET's with very small physical dimensions
Dennard, R. H., Gaensslen, F. H., Yu, H.-N., Rideout, V. L., Bassous, E., & LeBlanc, A. R. (1974) · IEEE Journal of Solid-State Circuits · doi:10.1109/jssc.1974.1050511 · Cited by 3,548
Generalized guide for MOSFET miniaturization
Brews, J. R., Fichtner, W., Nicollian, E. H., & Sze, S. M. (1980) · IEEE Electron Device Letters · doi:10.1109/edl.1980.25205 · Cited by 356
The Prospects for Multivalued Logic: A Technology and Applications View
Smith (1981) · IEEE Transactions on Computers · doi:10.1109/tc.1981.1675860 · Cited by 325
Shibata, T., & Ohmi, T. (1993) · IEEE Transactions on Electron Devices · doi:10.1109/16.199362 · Cited by 149
Self-citationAn intelligent MOS transistor featuring gate-level weighted sum and threshold operations
Shibata, T., & Ohmi, T. (2002) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.1991.235276 · Cited by 96
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Cited by
Future perspectives for spintronic devices
Hirohata, A., & Takanashi, K. (2014) · Journal of Physics D: Applied Physics · doi:10.1088/0022-3727/47/19/193001 · Cited by 559
Large-Area Soft e-Skin: The Challenges Beyond Sensor Designs
Dahiya, R., Yogeswaran, N., Liu, F., Manjakkal, L., Burdet, E., Hayward, V., & Jörntell, H. (2019) · Proceedings of the IEEE · doi:10.1109/jproc.2019.2941366 · Cited by 309
Proton‐Conducting Graphene Oxide‐Coupled Neuron Transistors for Brain‐Inspired Cognitive Systems
Wan, C. J., Zhu, L. Q., Liu, Y. H., Feng, P., Liu, Z. P., Cao, H. L., Xiao, P., Shi, Y., & Wan, Q. (2016) · Advanced Materials · doi:10.1002/adma.201505898 · Cited by 258
Nanowire FET Based Neural Element for Robotic Tactile Sensing Skin
Taube Navaraj, W., García Núñez, C., Shakthivel, D., Vinciguerra, V., Labeau, F., Gregory, D. H., & Dahiya, R. (2017) · Frontiers in Neuroscience · doi:10.3389/fnins.2017.00501 · Cited by 127
Metadata
- Authors
- Shibata, T., & Ohmi, T.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 1992-06
- Volume
- 39
- Issue
- 6
- Pages
- 1444-1455
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2160142098
- Cited by
- 615
- References
- 6
- FWCI
- 12.13
- Type
- journal article
- Language
- en
- Open access
- green
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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