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Monte Carlo simulation of a 30 nm dual-gate MOSFET: how short can Si go?

Frank, Laux, Fischetti·1992·International Technical Digest on Electron Devices Meeting

Abstract

Monte Carlo simulation is used to explore the characteristics of an n-channel MOSFET at the presently perceived limits of scaling. This dual-gated 30 nm gate-length FET is found to have excellent characteristics for use in digital logic, including a transconductance as high as 2300 mS/mm and an estimated ring-oscillator delay of 1.1 ps. The various motivations for this device design are discussed, illuminating the reasons for claiming that it is at the limits of scaling.>

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Metadata

Authors
Frank, Laux, & Fischetti
Venue
International Technical Digest on Electron Devices Meeting
Publisher
IEEE
Published
1992
Pages
553-556
ISSN
0163-1918 (ISSN-L)
OpenAlex
W2537621164
Cited by
268
References
0
FWCI
23.72
Type
conference paper
Language
en
Open access
closed

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CoChat. (2026). Citation check: Monte Carlo simulation of a 30 nm dual-gate MOSFET: how short can Si go? https://app.cochat.ai/papers/10.1109/iedm.1992.307422
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Frank, Laux, & Fischetti. (1992). Monte Carlo simulation of a 30 nm dual-gate MOSFET: how short can Si go? International Technical Digest on Electron Devices Meeting. https://doi.org/10.1109/iedm.1992.307422

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