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Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application
Abstract
Feasibility of the multi-layer cross-point structured binary oxide resistive memory (OxRRAM) has been tested for next generation non-volatile random access high density data storage application. Novel plug contact type bottom electrode (plug-BE) could reduce active memory cell diameter down to 50nm with smaller operation current and improved switching distributions. With 2 additional masks, one layer of plug-BE included cross-point memory array could be added on top of another one. No signal of inter-layer interference has been observed. Also, prototype binary oxide based diodes have been fabricated for the purpose of suppressing intra-layer interference of cross-point memory array
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Cited by
Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE · doi:10.1109/jproc.2012.2190369 · Cited by 2,757
Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory
Russo, U., Kamalanathan, D., Ielmini, D., Lacaita, A. L., & Kozicki, M. N. (2009) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2009.2016019 · Cited by 319
Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM
Chen, Y. Y., Goux, L., Clima, S., Govoreanu, B., Degraeve, R., Kar, G. S., Fantini, A., Groeseneken, G., Wouters, D. J., & Jurczak, M. (2013) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2013.2241064 · Cited by 271
Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories
Zhao, W., Moreau, M., Deng, E., Zhang, Y., Portal, J.-M., Klein, J.-O., Bocquet, M., Aziza, H., Deleruyelle, D., Muller, C., et al. (2014) · IEEE Transactions on Circuits and Systems I: Regular Papers · doi:10.1109/tcsi.2013.2278332 · Cited by 120
Self-Adaptive Write Circuit for Low-Power and Variation-Tolerant Memristors
Jo, K.-H., Jung, C.-M., Min, K.-S., & Kang, S.-M. (2010) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2010.2052108 · Cited by 53
Metadata
- Authors
- Baek, I. G., Kim, D. C., Lee, M. J., Kim, H.-J., Yim, E. K., Lee, M. S., Lee, J. E., Ahn, S. E., Seo, S., Lee, J. H., Park, J. C., Cha, Y. K., Park, S. O., Kim, H. S., Yoo, I. K., Chung, U., Moon, J. T., & Ryu, B. I.
- Venue
- IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
- Publisher
- IEEE
- Published
- 2006-04-07
- Pages
- 750-753
- OpenAlex
- W2543446546
- Cited by
- 218
- References
- 0
- FWCI
- 19.11
- Type
- conference paper
- Language
- en
- Open access
- closed
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- The paper
- Baek, I. G., Kim, D. C., Lee, M. J., Kim, H.-J., Yim, E. K., Lee, M. S., Lee, J. E., Ahn, S. E., Seo, S., Lee, J. H., Park, J. C., Cha, Y. K., Park, S. O., Kim, H. S., Yoo, I. K., Chung, U., Moon, J. T., & Ryu, B. I. (2006). Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application. IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. https://doi.org/10.1109/iedm.2005.1609462
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
