Cited by 53Advanced Memory and Neural ComputingLow-power high-performance VLSI designFerroelectric and Negative Capacitance Devices

Self-Adaptive Write Circuit for Low-Power and Variation-Tolerant Memristors

Kwan-Hee Jo, Chul-Moon Jung, Kyeong-Sik Min, Sung-Mo Kang·2010·IEEE Transactions on Nanotechnology

Abstract

Memristive devices such as memristors that have been intensively studied for their possibilities as a strong candidate for future memories are known to have two problems. First, they need a large current in write operation, and second their process-V -temperature (PVT) variations are large compared with the conventional DRAM and FLASH memories. Moreover, the large writing current can be magnified with PVT variations. In this letter, a new write circuit is proposed to prevent unnecessary power loss by using a self-adjusting circuit for properly sizing the writing pulsewidth, thereby minimizing power consumption. The simulation results show that self-adjusting the pulsewidth can save power by 76% on average, compared to the conventional write circuit with a fixed pulsewidth.

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Crossref · 10.1109/tnano.2010.2052108

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16 of 16 references verified0 citation errors · 0 not checkable

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Authors
Jo, K.-H., Jung, C.-M., Min, K.-S., & Kang, S.-M.
Affiliations
  • Kookmin University (KR)
  • University of California, Merced (US)
Venue
IEEE Transactions on Nanotechnology
Published
2010-11
Volume
9
Issue
6
Pages
675-678
ISSN
  • 1536-125X (ISSN-L)
  • 1941-0085
OpenAlex
W2114601050
Cited by
53
References
16
Citations by year
2026: 1 · 2024: 2 · 2023: 6 · 2022: 4 · 2021: 1 · 2020: 2 · 2019: 3 · 2018: 5 · 2017: 3 · 2016: 3 · 2015: 6 · 2014: 6 · 2013: 6 · 2012: 4
FWCI
2.77
Type
journal article
Language
en
Open access
closed
Locations
IEEE Transactions on Nanotechnology (publishedVersion)
Funders
IC Design Education Center
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Low-power high-performance VLSI design
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
Keywords
memristors, low-power memory, PVT variation, variation tolerance, energy consumption reduction

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