True random number generator using current difference based on a fractional stochastic model in 40-nm embedded ReRAM
Abstract
We have successfully developed a robust ReRAM true random number generator, using current difference, that does not require extra chip area. True random numbers are guaranteed by the current difference in the 1/fβnoise generated by Brownian motion, as tested using a fractional SDE model and verified using 1/fβnoise distribution. A highly reliable 40-nm ReRAM true random number generator circuit was designed and passed NIST SP800-22 randomness tests across all combinations of voltage (VDD ± 0.1 V) and temperature (-40 to 125 °C). The random number throughput achieves 32 Mbps with a low power consumption of 0.04 nJ/bit.
Integrity signals
Registry
Cites
Statistics
Claims the paper makes
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
The diffusive memristor TRNG can easily be incorporated into memory subsystems, greatly increasing security and area efficiency.
“The diffusive memristor TRNG can easily be incorporated into memory subsystems, greatly increasing the security, and the area efficiency33.”
From A novel true random number generator based on a stochastic diffusive memristor (2017) · cites this paper as [33]
Cites
Kasdin, N. J. (1995) · Proceedings of the IEEE · doi:10.1109/5.381848 · Cited by 536 · see citing works
A Contact-Resistive Random-Access-Memory-Based True Random Number Generator
Huang, C.-Y., Shen, W. C., Tseng, Y.-H., King, Y.-C., & Lin, C.-J. (2012) · IEEE Electron Device Letters · doi:10.1109/led.2012.2199734 · Cited by 167 · see citing works
Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application
Hayakawa, Y., Himeno, A., Yasuhara, R., Boullart, W., Vecchio, E., Vandeweyer, T., Witters, T., Crotti, D., Jurczak, M., Fujii, S., et al. (2015) · Symposium on VLSI Technology · doi:10.1109/vlsit.2015.7223684 · Cited by 91 · see citing works
Self-citationLiu, D., Liu, Z., Li, L., et al. (2016) · IEEE Transactions on Circuits & Systems II Express Briefs · doi:10.1109/tcsii.2016.2530800 · Cited by 89 · see citing works
A 440-nA True Random Number Generator for Passive RFID Tags
Balachandran, G. K., & Barnett, R. E. (2008) · IEEE Transactions on Circuits and Systems I Regular Papers · doi:10.1109/tcsi.2008.927220 · Cited by 48 · see citing works
Yoshimoto, Y., Katoh, Y., Ogasahara, S., et al. (2016) · IEEE Symposium on VLSI Technology · doi:10.1109/vlsit.2016.7573433 · Cited by 48 · see citing works
Self-citationSingle-Event Effect Performance of a Commercial Embedded ReRAM
Chen, D., Kim, H. S., Phan, A. M., et al. (2014) · IEEE Transactions on Nuclear Science · doi:10.1109/tns.2014.2361488 · Cited by 46 · see citing works
Wei, Z., Eriguchi, K., Muraoka, S., et al. (2015) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2015.7409650 · Cited by 23 · see citing works
Self-citationTrue Random Number Generator in 0.35/μm for RFID applications
Chen, Z., Wenbo, Y., & Boyle, K. (2015) · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) · doi:10.1109/edssc.2015.7285193 · Cited by 7 · see citing works
Flagged first, then by citations
Cited by
Sorted by citations
A novel true random number generator based on a stochastic diffusive memristor
Jiang, H., Belkin, D., Savel’ev, S. E., Lin, S., Wang, Z., Li, Y., Joshi, S., Midya, R., Li, C., Rao, M., et al. (2017) · Nature Communications · doi:10.1038/s41467-017-00869-x · Cited by 459 · see citing works
SearcHD: A Memory-Centric Hyperdimensional Computing With Stochastic Training
Imani, M., Yin, X., Messerly, J., Gupta, S., Niemier, M., Hu, X. S., & Rosing, T. (2020) · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · doi:10.1109/tcad.2019.2952544 · Cited by 87 · see citing works
- Authors
- Wei, Z., Katoh, Y., Ogasahara, S., Yoshimoto, Y., Kawai, K., Ikeda, Y., Eriguchi, K., Ohmori, K., & Yoneda, S.
- Affiliations
- Panasonic (Japan) (JP)
- Kyoto University (JP)
- University of Tsukuba (JP)
- Venue
- 2016 IEEE International Electron Devices Meeting (IEDM)
- Publisher
- IEEE
- Published
- 2016-12
- Pages
- 4.8.1-4.8.4
- ISSN
- 0163-1918 (ISSN-L)
- OpenAlex
- W2583505690
- Cited by
- 80
- References
- 9
- Citations by year
- 2026: 4 · 2025: 6 · 2024: 10 · 2023: 9 · 2022: 11 · 2021: 9 · 2020: 9 · 2019: 10 · 2018: 4 · 2017: 7 · 2012: 1
- FWCI
- 5.39
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Technical digest - International Electron Devices Meeting/Technical digest (publishedVersion)
- Topics
- Physical Sciences › Computer Science › Hardware and Architecture › Physical Unclonable Functions (PUFs) and Hardware Security
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Biomedical Engineering › Analog and Mixed-Signal Circuit Design
- Keywords
- true random number generator, resistive random access memory, Brownian motion, embedded memory, 40-nm CMOS
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
