A Contact-Resistive Random-Access-Memory-Based True Random Number Generator
Abstract
A new type of true random number generator, based on the random telegraph noise of a contact-resistive random access memory device, is proposed in this letter. The random-number generator consists of only a simple bias circuit plus a comparator, leading to small circuit area and low power consumption. By realizing this generator by the 65-nm complementary metal-oxide-semiconductor logic process, the occupied area can be as low as 45 μm2, demonstrating substantial saving in the circuit area.
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The 6 kb/s bit generation rate is sufficient for many encryption applications such as internet secure session link (SSL) keys, car keys, and identification cards.
“which is sufficient for many encryption applications such as internet secure session link (SSL) keys, car keys, and identification cards9, 29.”
From A novel true random number generator based on a stochastic diffusive memristor (2017) · cites this paper as [29]
Cites
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- Authors
- Huang, C.-Y., Shen, W. C., Tseng, Y.-H., King, Y.-C., & Lin, C.-J.
- Affiliations
- National Tsing Hua University (TW)
- Venue
- IEEE Electron Device Letters
- Published
- 2012-08
- Volume
- 33
- Issue
- 8
- Pages
- 1108-1110
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2072734492
- Cited by
- 167
- References
- 10
- Citations by year
- 2026: 2 · 2025: 9 · 2024: 16 · 2023: 20 · 2022: 7 · 2021: 23 · 2020: 20 · 2019: 14 · 2018: 10 · 2017: 14 · 2016: 14 · 2015: 12 · 2014: 2 · 2013: 3 · 2012: 1
- FWCI
- 8.91
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Electron Device Letters (publishedVersion)
- Topics
- Physical Sciences › Computer Science › Hardware and Architecture › Physical Unclonable Functions (PUFs) and Hardware Security
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Low-power high-performance VLSI design
- Keywords
- true random number generator, random telegraph noise, comparator, low power consumption, circuit area reduction, 65 nm CMOS
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