Novel Concept of the Transistor Variation Directed Toward the Circuit Implementation of Physical Unclonable Function (PUF) and True-random-number Generator (TRNG)
Abstract
For the first time, we use a unique feature of S/D variation of FinFET to realize PUF (Physical unclonable function) and TRNG (True random number generator). With the scaling of transistors, S/D variation becomes significant. This provides an opportunity to use the mismatch of the S/D resistances for the design of PUF. Method has been developed to first rule out those less significant factors of variation. Then, a PUF is developed based on the dominant S/D variation. In terms of the security, this PUF exhibits ideal un-biased normal distribution of hamming distance, and narrow distribution of hamming weight in the range of 45%~55%. The unstable bit rates are also very low (1.17%) under room temperature and 3.12% under 150°C, benchmarked on a 256 bits array. Meanwhile, as a result of the defect (in the form of traps) at the drain/substrate junction, RTN behavior was observed from the current measured between drain/source and substrate, named Ib-RTN. It provides us a way to implement a TRNG This TRNG passed NIST test up to 9 items. Overall, the S/D mismatch PUF and Ib-RTN TRNG demonstrated great potential to meet the requirements of the IoT security application.
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A MOSFET-based tRNG with 100% CMOS compatibility has been demonstrated for high scalability and applicability to an advanced foundry platform by using random telegraph noise or random charge trapping effects as an entropy source.
“As an alternative to the circuit-based tRNGs, a MOSFET-based tRNG with 100% CMOS compatibility has been demonstrated for high scalability and applicability to an advanced foundry platform by using random telegraph noise or random charge trapping effects as an entropy source (24–26).”
From Cryptographic transistor for true random number generator with low power consumption (2024) · cites this paper as [25]
The MOSFET-based tRNG's randomness is not fully verified, and high power consumption remains a problem in some cases.
“However, its randomness is not fully verified, and high power consumption remains a problem in some cases.”
From Cryptographic transistor for true random number generator with low power consumption (2024) · cites this paper as [25]
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Self-citationA low-power and high-speed True Random Number Generator using generated RTN
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Cryptographic transistor for true random number generator with low power consumption
Kim, S.-I., You, H.-J., Kim, M.-S., An, U.-S., Kim, M.-S., Lee, D. H., Ryu, S.-T., & Choi, Y.-K. (2024) · Science Advances · doi:10.1126/sciadv.adk6042 · Cited by 33 · see citing works
- Authors
- Xiao, Y., Hsieh, E. R., Chung, S. S., Chen, T. R., Huang, S. A., Chen, T. J., & Cheng, O.
- Affiliations
- National Yang Ming Chiao Tung University (TW)
- United Microelectronics (Taiwan) (TW)
- UMC,Hsinchu,Taiwan
- Venue
- 2019 IEEE International Electron Devices Meeting (IEDM)
- Publisher
- IEEE
- Published
- 2019-12
- Pages
- 21.5.1-21.5.4
- ISSN
- 0163-1918 (ISSN-L)
- OpenAlex
- W3006588925
- Cited by
- 11
- References
- 8
- Citations by year
- 2026: 2 · 2024: 2 · 2023: 3 · 2022: 2 · 2020: 2
- FWCI
- 0.79
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Technical digest - International Electron Devices Meeting/Technical digest (publishedVersion)
- Topics
- Physical Sciences › Computer Science › Hardware and Architecture › Physical Unclonable Functions (PUFs) and Hardware Security
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Low-power high-performance VLSI design
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Keywords
- physical unclonable functions, true random number generator, FinFET, Hamming distance, Hamming weight, bias stability, Internet of Things security, NIST randomness tests
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