The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics
Abstract
This paper presents an experimental parametric study of the parasitic inductance influence on MOSFET switching waveforms. The three most critical stray inductances, namely the gate-loop, switching-loop, and common-source inductances have all been studied and compared in terms of their effect on waveform ringing, switching loss, device stress, and electromagnetic interference. Based on the results obtained, a guideline has been established for the layout and design of high-speed switching circuits.
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Azar, R., Udrea, R., Ng, W. T., Dawson, F., Findlay, W., & Waind, P. (2008) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2007.909182 · Cited by 40
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Metadata
- Authors
- Chen, Z., Boroyevich, D., & Burgos, R.
- Venue
- The 2010 International Power Electronics Conference - ECCE ASIA -
- Publisher
- IEEE
- Published
- 2010-06
- Pages
- 164-169
- OpenAlex
- W1984078715
- Cited by
- 236
- References
- 1
- FWCI
- 10.48
- Type
- conference paper
- Language
- en
- Open access
- closed
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- Chen, Z., Boroyevich, D., & Burgos, R. (2010). Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics. The 2010 International Power Electronics Conference - ECCE ASIA -. https://doi.org/10.1109/ipec.2010.5543851
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