The DOI matches its Crossref record; 18 of the 18 references it cites were found in a registry or an index.
Modeling and Analysis of SiC MOSFET Switching Oscillations
Abstract
SiC MOSFETs exhibit extremely fast switching characteristics, which are unfortunately accompanied by undesirable switching oscillations. In this paper, equivalent circuit models incorporating all parasitic elements are developed for the turn-ON and turn-OFF of a SiC MOSFET. Simple mathematical formulas are derived to provide the theoretical analysis of the switching oscillation phenomenon, and to guide the snubber or damping circuit design. Both circuit simulation and experimental measurement are carried out to validate these simple equivalent circuit models.
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Cites
Biela, J., Schweizer, M., Waffler, S., & Kolar, J. W. (2011) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2010.2072896 · Cited by 892
Wang, J., Chung, H. S.-H., & Li, R. T.-H. (2013) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2012.2195332 · Cited by 551
Characterization, Modeling, and Application of 10-kV SiC MOSFET
Wang, J., Zhao, T., Li, J., Huang, A. Q., Callanan, R., Husna, F., & Agarwal, A. (2008) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2008.926650 · Cited by 398
Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
Palmour, J. W., Cheng, L., Pala, V., Brunt, E. V., Lichtenwalner, D. J., Wang, G.-Y., Richmond, J., O'Loughlin, M., Ryu, S., Allen, S. T., et al. (2014) · 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) · doi:10.1109/ispsd.2014.6855980 · Cited by 300
Active gate voltage control of turn-on di/dt and turn-off dv/dt in insulated gate transistors
Idir, N., Bausiere, R., & Franchaud, J. J. (2006) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2007.876895 · Cited by 288
Chen, Z., Boroyevich, D., & Burgos, R. (2010) · The 2010 International Power Electronics Conference - ECCE ASIA - · doi:10.1109/ipec.2010.5543851 · Cited by 236
Improving SiC JFET Switching Behavior Under Influence of Circuit Parasitics
Josifovic, I., Popovic-Gerber, J., & Ferreira, J. A. (2012) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2012.2185951 · Cited by 220
Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices
Chen, Z. (2009) · VTechWorks (Virginia Tech) · Cited by 189
Instability in Half-Bridge Circuits Switched With Wide Band-Gap Transistors
Lemmon, A., Mazzola, M., Gafford, J., & Parker, C. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2273275 · Cited by 169
Characterization and modeling of 1.2 kv, 20 A SiC MOSFETs
Chen, Z., Boroyevich, D., Burgos, R. P., et al. (2009) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2009.5316106 · Cited by 156
Cited by
Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges
Morya, A. K., Gardner, M. C., Anvari, B., Liu, L., Yepes, A. G., Doval-Gandoy, J., & Toliyat, H. A. (2019) · IEEE Transactions on Transportation Electrification · doi:10.1109/tte.2019.2892807 · Cited by 444
A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices
Zhang, B., & Wang, S. (2020) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2953730 · Cited by 367
Ding, X., Du, M., Duan, C., Guo, H., Xiong, R., Xu, J., Cheng, J., & Chi kwong Luk, P. (2018) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2017.2765670 · Cited by 138
Metadata
- Authors
- Liu, T., Ning, R., Wong, T., & Shen, Z. J.
- Venue
- IEEE Journal of Emerging and Selected Topics in Power Electronics
- Published
- 2016
- Pages
- 1-1
- ISSN
- 2168-6777 (ISSN-L)
- 2168-6785
- OpenAlex
- W2472698299
- Cited by
- 265
- References
- 18
- FWCI
- 12.50
- Type
- journal article
- Language
- en
- Open access
- closed
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- Liu, T., Ning, R., Wong, T., & Shen, Z. J. (2016). Modeling and Analysis of SiC MOSFET Switching Oscillations. IEEE Journal of Emerging and Selected Topics in Power Electronics. https://doi.org/10.1109/jestpe.2016.2587358
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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