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Cited by 265

The DOI matches its Crossref record; 18 of the 18 references it cites were found in a registry or an index.

Modeling and Analysis of SiC MOSFET Switching Oscillations

Liu, Tianjiao, Ning, Runtao, Wong, Thomas, Shen, Z. John·2016·IEEE Journal of Emerging and Selected Topics in Power Electronics

Abstract

SiC MOSFETs exhibit extremely fast switching characteristics, which are unfortunately accompanied by undesirable switching oscillations. In this paper, equivalent circuit models incorporating all parasitic elements are developed for the turn-ON and turn-OFF of a SiC MOSFET. Simple mathematical formulas are derived to provide the theoretical analysis of the switching oscillation phenomenon, and to guide the snubber or damping circuit design. Both circuit simulation and experimental measurement are carried out to validate these simple equivalent circuit models.

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Metadata

Authors
Liu, T., Ning, R., Wong, T., & Shen, Z. J.
Venue
IEEE Journal of Emerging and Selected Topics in Power Electronics
Published
2016
Pages
1-1
ISSN
  • 2168-6777 (ISSN-L)
  • 2168-6785
OpenAlex
W2472698299
Cited by
265
References
18
FWCI
12.50
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Modeling and Analysis of SiC MOSFET Switching Oscillations. https://app.cochat.ai/papers/10.1109/jestpe.2016.2587358
The paper
Liu, T., Ning, R., Wong, T., & Shen, Z. J. (2016). Modeling and Analysis of SiC MOSFET Switching Oscillations. IEEE Journal of Emerging and Selected Topics in Power Electronics. https://doi.org/10.1109/jestpe.2016.2587358

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.