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Cited by 3

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Analysis of Coupling Characteristics on Power Loop for Paralleled IGBTs

Mu, Feng, Liu, Yixin, Jia, Jingwen, Hao, Xin, Yang, Yong, Huang, Xianjin·2020·2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia)
DOI 10.1109/ipemc-ecceasia48364.2020.9368153
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Abstract

As power electronics applications tending to higher voltage and power density, the single module is insufficient to meet the demands. The paralleling of devices has been becoming one of the practical methods to solve this contradiction due to its economy and feasibility. However, the ideal static and dynamic current distribution can difficultly exist to achieve the maximum utilization of each device with the fact that the overall layout of the system is not completely symmetric. This paper mainly presents the analysis and comparison of the influence from driver concepts and coupling characteristics about power loop on current sharing characteristics of paralleled IGBTs, after that experimental results are demonstrated as a proof of respective views.

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Crossref · 10.1109/ipemc-ecceasia48364.2020.9368153

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Citations

Cites

Show all 1 references

Research works printed but not linked: 16

  1. jadhav, 2016, Analysis of different IGBT gate driver strategies influencing dynamic paralleling performance, PCIM Asia 2016, 218
  2. luniewski, 2007, Benefits of system-oriented IGBT module design for high power inverters, 2007 European Conference on Power Electronics and Applications, 10.1109/EPE.2007.4417527 · DOI
  3. luniewski, 2008, Unsymmetrical gate voltage drive for high power 1200V IGBT4 modules based on coreless transformer technology driver, Proc EPE-PEMC 2008, 88
  4. 10.1109/TPEL.2005.861115 · DOI
  5. 10.1109/IICPE.2006.4685345 · DOI
  6. bontemps, 2004, Parallel Connection of IGBT and MOSFET Power Modules, Advanced Power Technology Europe
  7. liang, 2014, The IGBT Module Layout Design Considering the Electrical and Thermal Performance, Transportation Electrification Asia-pacific 2014 IEEE Conference and Expo
  8. 10.1109/TIA.2007.900453 · DOI
  9. 2005, Analysis of High Power IGBT Short Circuit Failures, IEEE Transactions on Plasma Science, 1252
  10. schnell, 2015, LinPak, A New Low Inductive phase-leg IGBT Module with Easy Paralleling for High Power Density Converter designs, PCIM Europe
  11. 2014, LinPak: New IGBT open standard medium power phase-leg module featuring exceptional low inductance, ABB Press Release
  12. buchholz, 2015, Electrical Performance of A Low inductive 3.3kV Half Bridge IGBT Module, PCIM Europe 2015
  13. schuetze, 2015, Boost your System! Defining the Future of IGBT High Power Modules, Bodo’s Power Systems
  14. wissen, 2017, Effects of influencing the individual leg inductance in case of paralleling modules on basis of XHPTM3 and EconoDUALTM, IEEE 2017 PCIM Europe, 359
  15. weigel, 2018, Paralleling of High Power Dual Modules: Standard Building Block Design for Evaluation of Module Related Current Mismatch, 2018 20th European Conference on Power Electronics and Applications, 1
  16. 10.1109/TPEL.2016.2542198 · DOI · Paper page

Cited by

Metadata

Authors
Mu, F., Liu, Y., Jia, J., Hao, X., Yang, Y., & Huang, X.
Venue
2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia)
Publisher
IEEE
Published
2020-11-29
Pages
2178-2183
DOI
10.1109/ipemc-ecceasia48364.2020.9368153
Cited by
3
References
1
Licence
Funders
Fundamental Research Funds for the Central Universities

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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.