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A New Physical Mechanism for Soft Errors in Dynamic Memories

May, Timothy C., Woods, Murray H.·1978·16th International Reliability Physics Symposium

Abstract

A new physical soft error mechanism in dynamic RAMs and CCDs is the upset of stored data by the passage of heavily-ionizing radiation through the memory array area. Alpha particles are emitted in the radioactive decay of uranium and thorium present in parts-per-million levels in packaging materials. When an alpha particle penetrates the die surface, it can create enough electron-hole pairs near a storage node to cause a random, single-bit error. Results of experiments and measurements of alpha activity of materials are reported and a physical model for the soft error is developed. Implications for the future of dynamic memories are also discussed.

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Metadata

Authors
May, T. C., & Woods, M. H.
Venue
16th International Reliability Physics Symposium
Publisher
IEEE
Published
1978-04
Pages
33-40
ISSN
0735-0791 (ISSN-L)
OpenAlex
W2136476145
Cited by
239
References
0
FWCI
21.16
Type
conference paper
Language
en
Open access
closed

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CoChat. (2026). Citation check: A New Physical Mechanism for Soft Errors in Dynamic Memories. https://app.cochat.ai/papers/10.1109/irps.1978.362815
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May, T. C., & Woods, M. H. (1978). A New Physical Mechanism for Soft Errors in Dynamic Memories. 16th International Reliability Physics Symposium. https://doi.org/10.1109/irps.1978.362815

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