The DOI matches its Crossref record; 30 of the 30 references it cites were found in a registry or an index.
Brief history of JEDEC qualification standards for silicon technology and their applicability(?) to WBG semiconductors
Abstract
A brief history of JEDEC qualification standards for Si-based technology is presented. JEDEC qualification standards have evolved over the years due to Si-technology process changes, better understanding of chip operating conditions, and improvements in our understanding of the reliability physics. One of the more significant evolutionary developments is how high temperature operation life (HTOL) testing is now viewed. HTOL testing, while it is necessary for device qualification, it is far from being sufficient. HTOL testing does not adequately address many of the important failure mechanisms for Si-ICs (EM, SM, TDDB, HCI, and BTI). For this reason, JEDEC standards in recent years have tended to focus more on reaching industry consensus on required reliability stress-structures, reliability stress-conditions, and reliability models. As for wide band gap (WBG) semiconductors, and the expectation of very high operating temperatures for power devices, reliability assurance for WBG devices is critically important. Reliability assurance for WBG devices will undoubtedly depend strongly on developing appropriate: reliability test structures, test conditions, and failure models.
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“Consequently, the development of WBG-specific qualification methodologies is an active area of focus for industry bodies, including the JEDEC JC-70 committee [66].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [66]
Citations
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Sorted by citations
A Review of GaN HEMT Dynamic On-Resistance and Dynamic Stress Effects on Field Distribution
Gill, L., DasGupta, S., Neely, J. C., Kaplar, R. J., & Michaels, A. J. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3318182 · Cited by 68
Han, G., Kim, J., Park, S., & Bae, W. (2025) · Electronics · doi:10.3390/electronics14214193 · Cited by 34
“Consequently, the development of WBG-specific qualification methodologies is an active area of focus for industry bodies, in-Electronics cluding the JEDEC JC-70 committee [66].”
Metadata
- Authors
- McPherson, J. W.
- Corresponding author
- McPherson, J. W.
- ORCID
- McPherson, J. W.
- Venue
- 2018 IEEE International Reliability Physics Symposium (IRPS)
- Publisher
- IEEE
- Published
- 2018-03
- Pages
- 3B.1-1-3B.1-8
- ISSN
- 0735-0791 (ISSN-L)
- OpenAlex
- W2799476140
- Cited by
- 24
- References
- 30
- Citations by year
- 2026: 1 · 2025: 2 · 2024: 1 · 2023: 5 · 2022: 3 · 2020: 8 · 2019: 2 · 2018: 2
- FWCI
- 4.79
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- IEEE International Reliability Physics Symposium proceedings (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Integrated Circuits and Semiconductor Failure Analysis
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Keywords
- silicon technology, wide bandgap semiconductors, reliability physics, device reliability, failure models, power devices, high-temperature operation, electromigration, hot carrier injection, time-dependent dielectric breakdown, bias temperature instability
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