The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
Abstract
Since Cree, Inc.'s 2ndgeneration 4H-SiC MOSFETs were commercially released with a specific on-resistance (RON, SP) of 5 mΩ·cm2for a 1200 V-rating in early 2013, we have further optimized the device design and fabrication processes as well as greatly expanded the voltage ratings from 900 V up to 15 kV for a much wider range of high-power, high-frequency, and highvoltage energy-conversion and transmission applications. Using these next-generation SiC MOSFETs, we have now achieved new breakthrough performance for voltage ratings from 900 V up to 15 kV with a RON, SPas low as 2.3 mΩ·cm2for a breakdown voltage (BV) of 1230 V and 900 V-rating, 2.7 mΩ·cm2for a BV of 1620 V and 1200 V-rating, 3.38 mΩ·cm2for a BV of 1830 V and 1700 V-rating, 10.6 mΩ·cm2for a BV of 4160 V and 3300 V-rating, 123 mΩ·cm2for a BV of 12 kV and 10 kV-rating, and 208 mΩ·cm2for a BV of 15.5 kV and 15 kV-rating. In addition, due to the lack of current tailing during the bipolar device switching turn-off, the SiC MOSFETs reported in this work exhibit incredibly high frequency switching performance over their silicon counter parts.
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Cites
10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation
Grider, D., Das, M., Agarwal, A., Palmour, J., Leslie, S., Ostop, J., Raju, R., Schutten, M., & Hefner, A. (2011) · 2011 IEEE Electric Ship Technologies Symposium · doi:10.1109/ests.2011.5770855 · Cited by 115
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Research works printed but not linked: 3
- briere, 2013, GaN based power devices, RPI CFES Conference
- 10.4028/www.scientific.net/MSF.717-720.1065 · DOI
- 0, 5SMX 12M6501 IGBT Datasheet
Cited by
Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges
Morya, A. K., Gardner, M. C., Anvari, B., Liu, L., Yepes, A. G., Doval-Gandoy, J., & Toliyat, H. A. (2019) · IEEE Transactions on Transportation Electrification · doi:10.1109/tte.2019.2892807 · Cited by 444
Advances in Power Conversion and Drives for Shipboard Systems
Wang, F., Zhang, Z., Ericsen, T., Raju, R., Burgos, R., & Boroyevich, D. (2015) · Proceedings of the IEEE · doi:10.1109/jproc.2015.2495331 · Cited by 135
Hu, B., Wei, Z., You, H., Na, R., Liu, R., Xiong, H., Fu, P., Zhang, J., & Wang, J. (2021) · IEEE Open Journal of Power Electronics · doi:10.1109/ojpel.2021.3069780 · Cited by 45
Power device breakdown mechanism and characterization: review and perspective
Zhang, R., & Zhang, Y. (2023) · Japanese Journal of Applied Physics · doi:10.35848/1347-4065/acb365 · Cited by 40
Li, X., Deng, X., Liao, Z., Li, X., Jia, R., & Zhang, B. (2025) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2024.3524371 · Cited by 11
Metadata
- Authors
- Palmour, J. W., Cheng, L., Pala, V., Brunt, E. V., Lichtenwalner, D. J., Wang, G.-Y., Richmond, J., O'Loughlin, M., Ryu, S., Allen, S. T., Burk, A. A., & Scozzie, C.
- Venue
- 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
- Publisher
- IEEE
- Published
- 2014-06
- Pages
- 79-82
- ISSN
- 1063-6854 (ISSN-L)
- OpenAlex
- W1973592577
- Cited by
- 300
- References
- 1
- FWCI
- 28.44
- Type
- conference paper
- Language
- en
- Open access
- closed
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- Palmour, J. W., Cheng, L., Pala, V., Brunt, E. V., Lichtenwalner, D. J., Wang, G.-Y., Richmond, J., O'Loughlin, M., Ryu, S., Allen, S. T., Burk, A. A., & Scozzie, C. (2014). Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV. 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD). https://doi.org/10.1109/ispsd.2014.6855980
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