The DOI matches its Crossref record; 8 of the 8 references it cites were found in a registry or an index.
Analysis of Degradation Phenomena in Bipolar Degradation Screening Process for SiC-MOSFETs
Abstract
We have developed a 3.3 kV ultra-high power density SiC power module, which was realized by fulfilment with only SiC-MOSFETs. As a countermeasure for bipolar degradation issues related to body diodes in the MOSFET structure, a high throughput screening process has been introduced. In the screening process, over 10000 chips of 3.3 kV SiC-MOSFET were evaluated. The large amount of data firstly reveals the probability distribution of the degradation phenomena and enables us to study the relationship with defect densities of the state-of-the-art SiC wafers. Furthermore, origins of the degradation were investigated by teardown analysis. The degradation is caused by the expansion or generation of bar-shaped stacking faults. It was identified that their origins are pre-existing bar-shaped stacking faults in a SiC epi-layer, a basal plane dislocation in a SiC substrate, or a closed micropipe.
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Third quadrant conduction and forward bias expand the basal plane and create a triangular-shaped stacking fault within the drift region.
“The third quadrant conduction and forward bias expand the basal plane and create a triangularshaped stacking fault within the drift region [39], [55]-[57].”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [39]
Citations
Cites
Understanding and reduction of degradation phenomena in SiC power devices
Kimoto, T., Iijima, A., Tsuchida, H., Miyazawa, T., Tawara, T., Otsuki, A., Kato, T., & Yonezawa, Y. (2017) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2017.7936253 · Cited by 84
3.3 kV All-SiC Power Module for Traction System Use
Negishi, T., Tsuda, R., Ota, K., et al. (2017) · Cited by 25
Modeling of Stacking Fault Expansion Velocity of Body Diode in 4H-SiC MOSFET
Konishi, K., Fujita, R., Shima, A., et al. (2017) · Materials science forum · doi:10.4028/www.scientific.net/msf.897.214 · Cited by 21
Self-citation3.3 kV/450 A Full-SiC nHPD2 (next High Power Density Dual) with Smooth Switching
Ishigaki, T., Hayakawa, S., Murata, T., et al. (2017) · Cited by 20
Self-citationInfluence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term Reliability
Rupp, R., Treu, M., Türkes, P., et al. (2005) · Materials science forum · doi:10.4028/www.scientific.net/msf.483-485.925 · Cited by 19
Ebiike, Y., Murakami, T., Suekawa, E., et al. (2018) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2018.8393699 · Cited by 17
Lindahl, M., Velander, E., Johansson, M. H., et al. (2018) · IEEE Vehicle Power and Propulsion Conference (VPPC) · doi:10.1109/vppc.2018.8604975 · Cited by 11
A 3.3 kV / 800 A Ultra-High Power Density SiC Power Module
Ishigaki, T., Hayakawa, S., Murata, T., Tabata, T., Asaka, K., Kinoshita, K., Oda, T., Yasui, K., Morita, T., Kawase, D., et al. (2018) · Cited by 9
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Research works printed but not linked: 1
- terasawa, 2018, Development of Lightweight Traction Systems to Reduce Energy Consumption, Hitachi Review, 67, 38
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AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters
Farhadi, M., Vankayalapati, B. T., Sajadi, R., & Akin, B. (2023) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2023.3271251 · Cited by 24
“[35], [38], [39], [40].”
Background
Metadata
- Authors
- Ishigaki, T., Murata, T., Kinoshita, K., Morikawa, T., Oda, T., Fujita, R., Konishi, K., Mori, Y., & Shima, A.
- Affiliations
- Hitachi (Japan) (JP)
- Venue
- 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
- Publisher
- IEEE
- Published
- 2019-05
- Pages
- 259-262
- ISSN
- 1063-6854 (ISSN-L)
- OpenAlex
- W2960540394
- Cited by
- 55
- References
- 8
- Citations by year
- 2026: 6 · 2025: 10 · 2024: 7 · 2023: 12 · 2022: 7 · 2021: 5 · 2020: 7 · 2019: 1
- FWCI
- 7.96
- Type
- conference paper
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon and Solar Cell Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Keywords
- SiC MOSFET, bipolar degradation, body diode, stacking faults, SiC wafers, basal plane dislocations, SiC power modules
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