1200-V SiC MOSFET Short-Circuit Ruggedness Evaluation and Methods to Improve Withstand Time

This article presents the short-circuit (SC) capability evaluation of TO-247-3 packaged silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) based on tests under different drain biases and gate biases. Compared with the 900-V Si super-junction MOSFET and the 1200-V S…