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SiC power-switching devices-the second electronics revolution?
Abstract
Silicon carbide (SiC) offers significant advantages for power-switching devices because the critical field for avalanche breakdown is about ten times higher than in silicon. SiC power devices have made remarkable progress in the past five years, demonstrating currents in excess of 100 A and blocking voltages in excess of 19000 V. In this paper we describe the latest progress in three classes of SiC devices: diodes (p-i-n and Schottky), transistors (junction field-effect transistor, metal-oxide-semiconductor field-effect transistor, and bipolar junction transistor), and thyristors (gate turn-off).
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Citations
Cited by
Material Science and Device Physics in SiC Technology for High-Voltage Power Devices
Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176
High-temperature electronics - a role for wide bandgap semiconductors?
Neudeck, P. G., Okojie, R. S., & Chen, L.-Y. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021571 · Cited by 1,050
Bai, J. G., Zhang, Z. Z., Calata, J. N., & Lu, G.-Q. (2006) · IEEE Transactions on Components and Packaging Technologies · doi:10.1109/tcapt.2005.853167 · Cited by 375
A Review on Die Attach Materials for SiC-Based High-Temperature Power Devices
Chin, H. S., Cheong, K. Y., & Ismail, A. B. (2010) · Metallurgical and Materials Transactions B · doi:10.1007/s11663-010-9365-5 · Cited by 337
Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements
Lelis, A. J., Habersat, D., Green, R., Ogunniyi, A., Gurfinkel, M., Suehle, J., & Goldsman, N. (2008) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2008.926672 · Cited by 326
Metadata
- Authors
- Cooper, J. A., & Agarwal, A.
- Venue
- Proceedings of the IEEE
- Published
- 2002-06
- Volume
- 90
- Issue
- 6
- Pages
- 956-968
- ISSN
- 0018-9219 (ISSN-L)
- OpenAlex
- W2046381472
- Cited by
- 394
- References
- 0
- FWCI
- 11.57
- Type
- journal article
- Language
- en
- Open access
- closed
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