The DOI matches its Crossref record.
Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors
Abstract
This work reports on Fowler-Nordheim (F-N) injection studies on n-type 6H-SiC and 4H-SiC MOS systems under positive gate bias from 25 to 325/spl deg/C. At a given temperature and electric field, the current density in the 4H-SiC MOS system is about five times higher than that in 6H-SiC due to the smaller effective barrier height for the 4H-SiC MOS system as compared to 6H-SiC. The reduction of the effective barrier height with temperature, particularly in 4H-SiC, raises serious concerns about the long-term reliability of gate oxides in SiC. It is concluded that the maximum practical values of electric field in the 4H-SiC MOS system under positive gate bias and high junction temperature should be reduced to below the values used in the Si MOS system.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cited by
High-temperature electronics - a role for wide bandgap semiconductors?
Neudeck, P. G., Okojie, R. S., & Chen, L.-Y. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021571 · Cited by 1,050
Chen, Z., Yao, Y., Boroyevich, D., Ngo, K. D. T., Mattavelli, P., & Rajashekara, K. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2283245 · Cited by 277
Review and analysis of SiC MOSFETs’ ruggedness and reliability
Wang, J., & Jiang, X. (2020) · IET Power Electronics · doi:10.1049/iet-pel.2019.0587 · Cited by 221
Role of Threshold Voltage Shift in Highly Accelerated Power Cycling Tests for SiC MOSFET Modules
Luo, H., Iannuzzo, F., & Turnaturi, M. (2020) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2894717 · Cited by 82
1200-V SiC MOSFET Short-Circuit Ruggedness Evaluation and Methods to Improve Withstand Time
Xing, D., Hu, B., Kang, M., Zhang, Y., Nayak, S., Wang, J., & Agarwal, A. K. (2022) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2022.3144995 · Cited by 33
Self-citation
Metadata
- Authors
- Agarwal, A. K., Seshadri, S., & Rowland, L. B.
- Venue
- IEEE Electron Device Letters
- Published
- 1997-12
- Volume
- 18
- Issue
- 12
- Pages
- 592-594
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2156650445
- Cited by
- 199
- References
- 0
- FWCI
- 10.55
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors. https://app.cochat.ai/papers/10.1109/55.644081
- The paper
- Agarwal, A. K., Seshadri, S., & Rowland, L. B. (1997). Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors. IEEE Electron Device Letters. https://doi.org/10.1109/55.644081
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
