The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
GaN-Based RF Power Devices and Amplifiers
Abstract
The rapid development of the RF power electronics requires the introduction of wide bandgap material due to its potential in high output power density, high operation voltage and high input impedance. GaN-based RF power devices have made substantial progresses in the last decade. This paper attempts to review the latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, to achieve the state-of-the-art microwave and millimeter-wave performance. The reliability and manufacturing challenges are also discussed.
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Citations
Cites
High electron mobility transistor based on a GaN-Al x Ga1−x N heterojunction
Asif Khan, M., Bhattarai, A., Kuznia, J. N., & Olson, D. T. (1993) · Applied Physics Letters · doi:10.1063/1.109775 · Cited by 911
Cited by
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., Kaplar, R. J., Rajan, S., Van de Walle, C. G., Bellotti, E., et al. (2018) · Advanced Electronic Materials · doi:10.1002/aelm.201600501 · Cited by 1,602
Self-citationReliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
Meneghesso, G., Verzellesi, G., Danesin, F., Rampazzo, F., Zanon, F., Tazzoli, A., Meneghini, M., & Zanoni, E. (2008) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2008.923743 · Cited by 675
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Pearton, S. J., Ren, F., Tadjer, M., & Kim, J. (2018) · Journal of Applied Physics · doi:10.1063/1.5062841 · Cited by 659
Computationally predicted energies and properties of defects in GaN
Lyons, J. L., & Van de Walle, C. G. (2017) · npj Computational Materials · doi:10.1038/s41524-017-0014-2 · Cited by 312
Materials challenges for trapped-ion quantum computers
Brown, K. R., Chiaverini, J., Sage, J. M., & Häffner, H. (2021) · Nature Reviews Materials · doi:10.1038/s41578-021-00292-1 · Cited by 120
Metadata
- Authors
- Mishra, U. K., Likun, S., Kazior, T. E., & Wu, Y.-F.
- Venue
- Proceedings of the IEEE
- Published
- 2008-02
- Volume
- 96
- Issue
- 2
- Pages
- 287-305
- ISSN
- 0018-9219 (ISSN-L)
- 1558-2256
- OpenAlex
- W1965817159
- Cited by
- 1,828
- References
- 1
- FWCI
- 41.81
- Type
- journal article
- Language
- en
- Open access
- closed
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- Mishra, U. K., Likun, S., Kazior, T. E., & Wu, Y.-F. (2008). GaN-Based RF Power Devices and Amplifiers. Proceedings of the IEEE. https://doi.org/10.1109/jproc.2007.911060
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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