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GaN Power Transistors on Si Substrates for Switching Applications
Abstract
In this paper, GaN power transistors on Si substrates for power switching application are reported. GaN heterojunction field-effect transistor (HFET) structure on Si is an important configuration in order to realize a low loss and high power devices as well as one of the cost-effective solutions. Current collapse phenomena are discussed for GaN-HFETs on Si substrate, resulting in suppression of the current collapse due to using the conducting Si substrate. Furthermore, attempts for normally off GaN-FETs were examined. A hybrid metal-oxide-semiconductor HFET structure is a promising candidate for obtaining devices with a lower on-resistance (Ron) and a high breakdown voltage (Vb).
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Cited by
The 2018 GaN power electronics roadmap
Amano, H., Baines, Y., Beam, E., Borga, M., Bouchet, T., Chalker, P. R., Charles, M., Chen, K. J., Chowdhury, N., Chu, R., et al. (2018) · Journal of Physics D: Applied Physics · doi:10.1088/1361-6463/aaaf9d · Cited by 1,313
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
Jones, E. A., Wang, F. F., & Costinett, D. (2016) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2016.2582685 · Cited by 1,259
Gallium nitride devices for power electronic applications
Baliga, B. J. (2013) · Semiconductor Science and Technology · doi:10.1088/0268-1242/28/7/074011 · Cited by 624
1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
Chu, R., Corrion, A., Chen, M., Li, R., Wong, D., Zehnder, D., Hughes, B., & Boutros, K. (2011) · IEEE Electron Device Letters · doi:10.1109/led.2011.2118190 · Cited by 367
Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs
Stockman, A., Canato, E., Meneghini, M., Meneghesso, G., Moens, P., & Bakeroot, B. (2019) · 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) · doi:10.1109/ispsd.2019.8757667 · Cited by 66
Metadata
- Authors
- Ikeda, N., Niiyama, Y., Kambayashi, H., Sato, Y., Nomura, T., Kato, S., & Yoshida, S.
- Venue
- Proceedings of the IEEE
- Published
- 2010-07
- Volume
- 98
- Issue
- 7
- Pages
- 1151-1161
- ISSN
- 0018-9219 (ISSN-L)
- 1558-2256
- OpenAlex
- W2085066220
- Cited by
- 525
- References
- 0
- FWCI
- 23.34
- Type
- journal article
- Language
- en
- Open access
- closed
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- Ikeda, N., Niiyama, Y., Kambayashi, H., Sato, Y., Nomura, T., Kato, S., & Yoshida, S. (2010). GaN Power Transistors on Si Substrates for Switching Applications. Proceedings of the IEEE. https://doi.org/10.1109/jproc.2009.2034397
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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