The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.
1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
Abstract
This letter reports high-voltage GaN field-effect transistors fabricated on Si substrates. A halide-based plasma treatment was performed to enable normally off operation. Atomic layer deposition of Al2O3gate insulator was adopted to reduce the gate leakage current. Incorporation of multiple field plates, with one field plate connected to the gate electrode and two field plates connected to the source electrode successfully enabled a high breakdown voltage of 1200 V and low dynamic on-resistance at high-voltage operation.
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Citations
Cites
30-W/mm GaN HEMTs by Field Plate Optimization
Wu, Y.-F., Saxler, A., Moore, M., Smith, R. P., Sheppard, S., Chavarkar, P. M., Wisleder, T., Mishra, U. K., & Parikh, P. (2004) · IEEE Electron Device Letters · doi:10.1109/led.2003.822667 · Cited by 1,104
Uemoto, Y., Hikita, M., Ueno, H., Matsuo, H., Ishida, H., Yanagihara, M., Ueda, T., Tanaka, T., & Ueda, D. (2007) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2007.908601 · Cited by 1,038
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Cai, Y., Zhou, Y., Chen, K. J., & Lau, K. M. (2005) · IEEE Electron Device Letters · doi:10.1109/led.2005.851122 · Cited by 665
GaN Power Transistors on Si Substrates for Switching Applications
Ikeda, N., Niiyama, Y., Kambayashi, H., Sato, Y., Nomura, T., Kato, S., & Yoshida, S. (2010) · Proceedings of the IEEE · doi:10.1109/jproc.2009.2034397 · Cited by 525
High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates
Xing, H., Dora, Y., Chini, A., Heikman, S., Keller, S., & Mishra, U. K. (2004) · IEEE Electron Device Letters · doi:10.1109/led.2004.824845 · Cited by 360
A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz
Wu, Y., Jacob-Mitos, M., Moore, M. L., & Heikman, S. (2008) · IEEE Electron Device Letters · doi:10.1109/led.2008.2000921 · Cited by 260
Saito, W., Nitta, T., Kakiuchi, Y., Saito, Y., Tsuda, K., Omura, I., & Yamaguchi, M. (2007) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2007.901150 · Cited by 237
Cited by
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
Jones, E. A., Wang, F. F., & Costinett, D. (2016) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2016.2582685 · Cited by 1,259
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Stability, Reliability, and Robustness of GaN Power Devices: A Review
Kozak, J. P., Zhang, R., Porter, M., Song, Q., Liu, J., Wang, B., Wang, R., Saito, W., & Zhang, Y. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3266365 · Cited by 441
Wang, H., Wei, J., Xie, R., Liu, C., Tang, G., & Chen, K. J. (2017) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2016.2610460 · Cited by 283
A Review of High-Speed GaN Power Modules: State of the Art, Challenges, and Solutions
Emon, A. I., Mustafeez-ul-Hassan, Mirza, A. B., Kaplun, J., Vala, S. S., & Luo, F. (2023) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2022.3232265 · Cited by 151
Metadata
- Authors
- Chu, R., Corrion, A., Chen, M., Li, R., Wong, D., Zehnder, D., Hughes, B., & Boutros, K.
- Venue
- IEEE Electron Device Letters
- Published
- 2011-05
- Volume
- 32
- Issue
- 5
- Pages
- 632-634
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2159764454
- Cited by
- 367
- References
- 7
- FWCI
- 22.45
- Type
- journal article
- Language
- en
- Open access
- closed
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- Chu, R., Corrion, A., Chen, M., Li, R., Wong, D., Zehnder, D., Hughes, B., & Boutros, K. (2011). 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance. IEEE Electron Device Letters. https://doi.org/10.1109/led.2011.2118190
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
