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Cited by 1,806

The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.

Phase Change Memory

Wong, H.-S. Philip, Raoux, Simone, Kim, SangBum, Liang, Jiale, Reifenberg, John P., Rajendran, Bipin, Asheghi, Mehdi, Goodson, Kenneth E.·2010·Proceedings of the IEEE

Abstract

In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling properties of PCM are illustrated with recent experimental results using special device test structures and novel material synthesis. Factors affecting the reliability of PCM are discussed.

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Crossref · 10.1109/jproc.2010.2070050

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Metadata

Authors
Wong, H.-S. P., Raoux, S., Kim, S., Liang, J., Reifenberg, J. P., Rajendran, B., Asheghi, M., & Goodson, K. E.
Venue
Proceedings of the IEEE
Published
2010-12
Volume
98
Issue
12
Pages
2201-2227
ISSN
  • 0018-9219 (ISSN-L)
  • 1558-2256
OpenAlex
W2526202524
Cited by
1,806
References
3
FWCI
28.26
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Phase Change Memory. https://app.cochat.ai/papers/10.1109/jproc.2010.2070050
The paper
Wong, H.-S. P., Raoux, S., Kim, S., Liang, J., Reifenberg, J. P., Rajendran, B., Asheghi, M., & Goodson, K. E. (2010). Phase Change Memory. Proceedings of the IEEE. https://doi.org/10.1109/jproc.2010.2070050

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.