The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Phase Change Memory
Abstract
In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling properties of PCM are illustrated with recent experimental results using special device test structures and novel material synthesis. Factors affecting the reliability of PCM are discussed.
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Citations
Cites
Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing
Kuzum, D., Jeyasingh, R. G. D., Lee, B., & Wong, H.-S. P. (2012) · Nano Letters · doi:10.1021/nl201040y · Cited by 1,267
Self-citationSuri, M., Bichler, O., Querlioz, D., Cueto, O., Perniola, L., Sousa, V., Vuillaume, D., Gamrat, C., & DeSalvo, B. (2011) · 2011 International Electron Devices Meeting · doi:10.1109/iedm.2011.6131488 · Cited by 314
Ordering Up the Minimum Thermal Conductivity of Solids
Goodson, K. E. (2007) · Science · doi:10.1126/science.1138067 · Cited by 79
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Cited by
Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE · doi:10.1109/jproc.2012.2190369 · Cited by 2,757
Self-citationMemory devices and applications for in-memory computing
Sebastian, A., Le Gallo, M., Khaddam-Aljameh, R., & Eleftheriou, E. (2020) · Nature Nanotechnology · doi:10.1038/s41565-020-0655-z · Cited by 2,289
van de Burgt, Y., Lubberman, E., Fuller, E. J., Keene, S. T., Faria, G. C., Agarwal, S., Marinella, M. J., Alec Talin, A., & Salleo, A. (2017) · Nature Materials · doi:10.1038/nmat4856 · Cited by 1,872
Nanoscale thermal transport. II. 2003–2012
Cahill, D. G., Braun, P. V., Chen, G., Clarke, D. R., Fan, S., Goodson, K. E., Keblinski, P., King, W. P., Mahan, G. D., Majumdar, A., et al. (2014) · Applied Physics Reviews · doi:10.1063/1.4832615 · Cited by 1,763
Self-citationIntegrated all-photonic non-volatile multi-level memory
Ríos, C., Stegmaier, M., Hosseini, P., Wang, D., Scherer, T., Wright, C. D., Bhaskaran, H., & Pernice, W. H. P. (2015) · Nature Photonics · doi:10.1038/nphoton.2015.182 · Cited by 1,312
Metadata
- Authors
- Wong, H.-S. P., Raoux, S., Kim, S., Liang, J., Reifenberg, J. P., Rajendran, B., Asheghi, M., & Goodson, K. E.
- Venue
- Proceedings of the IEEE
- Published
- 2010-12
- Volume
- 98
- Issue
- 12
- Pages
- 2201-2227
- ISSN
- 0018-9219 (ISSN-L)
- 1558-2256
- OpenAlex
- W2526202524
- Cited by
- 1,806
- References
- 3
- FWCI
- 28.26
- Type
- journal article
- Language
- en
- Open access
- closed
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- Wong, H.-S. P., Raoux, S., Kim, S., Liang, J., Reifenberg, J. P., Rajendran, B., Asheghi, M., & Goodson, K. E. (2010). Phase Change Memory. Proceedings of the IEEE. https://doi.org/10.1109/jproc.2010.2070050
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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