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Cited by 693

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Resistivity Measurements on Germanium for Transistors

Valdes, L.·1954·Proceedings of the IRE

Abstract

This paper discusses a laboratory method which has been found very useful for measuring the resistivity of the semiconductor germanium. The method consists of placing four probes that make contact along a line on the surface of the material. Current is passed through the outer pair of probes and the floating potential is measured across the inner pair. There are seven cases considered, the probes on a semi-infinite volume of semiconductor material and the probes near six different types of boundaries. Formulas and curves needed to compute resistivity are given for each case.

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Metadata

Authors
Valdes, L.
Venue
Proceedings of the IRE
Published
1954-02
Volume
42
Issue
2
Pages
420-427
ISSN
0096-8390 (ISSN-L)
OpenAlex
W2076361389
Cited by
693
References
0
FWCI
2.38
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Resistivity Measurements on Germanium for Transistors. https://app.cochat.ai/papers/10.1109/jrproc.1954.274680
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Valdes, L. (1954). Resistivity Measurements on Germanium for Transistors. Proceedings of the IRE. https://doi.org/10.1109/jrproc.1954.274680

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.