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Design of ion-implanted MOSFET's with very small physical dimensions
Abstract
This paper considers the design, fabrication, and characterization of very small Mosfet switching devices suitable for digital integrated circuits, using dimensions of the order of 1 /spl mu/. Scaling relationships are presented which show how a conventional MOSFET can be reduced in size. An improved small device structure is presented that uses ion implantation, to provide shallow source and drain regions and a nonuniform substrate doping profile. One-dimensional models are used to predict the substrate doping profile and the corresponding threshold voltage versus source voltage characteristic. A two-dimensional current transport model is used to predict the relative degree of short-channel effects for different device parameter combinations. Polysilicon-gate MOSFET's with channel lengths as short as 0.5 /spl mu/ were fabricated, and the device characteristics measured and compared with predicted values. The performance improvement expected from using these very small devices in highly miniaturized integrated circuits is projected.
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Cited by
Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits
Roy, K., Mukhopadhyay, S., & Mahmoodi-Meimand, H. (2003) · Proceedings of the IEEE · doi:10.1109/jproc.2002.808156 · Cited by 2,368
Thomson, D., Zilkie, A., Bowers, J. E., Komljenovic, T., Reed, G. T., Vivien, L., Marris-Morini, D., Cassan, E., Virot, L., Fédéli, J.-M., et al. (2016) · Journal of Optics · doi:10.1088/2040-8978/18/7/073003 · Cited by 1,363
Resistive switching materials for information processing
Wang, Z., Wu, H., Burr, G. W., Hwang, C. S., Wang, K. L., Xia, Q., & Yang, J. J. (2020) · Nature Reviews Materials · doi:10.1038/s41578-019-0159-3 · Cited by 1,214
Three-dimensional integration of nanotechnologies for computing and data storage on a single chip
Shulaker, M. M., Hills, G., Park, R. S., Howe, R. T., Saraswat, K., Wong, H.-S. P., & Mitra, S. (2017) · Nature · doi:10.1038/nature22994 · Cited by 866
Ho, P. S., & Kwok, T. (1989) · Reports on Progress in Physics · doi:10.1088/0034-4885/52/3/002 · Cited by 836
Metadata
- Authors
- Dennard, R. H., Gaensslen, F. H., Yu, H.-N., Rideout, V. L., Bassous, E., & LeBlanc, A. R.
- Venue
- IEEE Journal of Solid-State Circuits
- Published
- 1974-10
- Volume
- 9
- Issue
- 5
- Pages
- 256-268
- ISSN
- 0018-9200 (ISSN-L)
- 1558-173X
- OpenAlex
- W2132729131
- Cited by
- 3,548
- References
- 0
- FWCI
- 25.05
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Design of ion-implanted MOSFET's with very small physical dimensions. https://app.cochat.ai/papers/10.1109/jssc.1974.1050511
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- Dennard, R. H., Gaensslen, F. H., Yu, H.-N., Rideout, V. L., Bassous, E., & LeBlanc, A. R. (1974). Design of ion-implanted MOSFET's with very small physical dimensions. IEEE Journal of Solid-State Circuits. https://doi.org/10.1109/jssc.1974.1050511
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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