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$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric
Open accessAbstract
We demonstrate atomic-layer-deposited (ALD) high-kdielectric integration on 2-D layer-structured molybdenum disulfide (MoS2) crystals and MoS2dual-gate n-channel MOSFETs with ALD Al2O3as the gate dielectric. OurC-Vstudy of MOSFET structures shows good interface between 2-D MoS2crystal and ALD Al2O3. Maximum drain currents using back gates and top gates are measured to be 7.07 and 6.42 mA/mm, respectively, atVds= 2 V with a channel width of 3 μm, a channel length of 9 μm, and a top-gate length of 3 μm. We achieve the highest field-effect mobility of electrons using back-gate control to be 517 cm2/V·s. The highest current on/off ratio is over 108.
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Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
Zhang, H., Liu, C.-X., Qi, X.-L., Dai, X., Fang, Z., & Zhang, S.-C. (2009) · Nature Physics · doi:10.1038/nphys1270 · Cited by 6,359
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Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
Butler, S. Z., Hollen, S. M., Cao, L., Cui, Y., Gupta, J. A., Gutiérrez, H. R., Heinz, T. F., Hong, S. S., Huang, J., Ismach, A. F., et al. (2013) · ACS Nano · doi:10.1021/nn400280c · Cited by 4,878
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Hysteresis in Single-Layer MoS2 Field Effect Transistors
Late, D. J., Liu, B., Matte, H. S. S. R., Dravid, V. P., & Rao, C. N. R. (2012) · ACS Nano · doi:10.1021/nn301572c · Cited by 1,123
Photocurrent generation with two-dimensional van der Waals semiconductors
Buscema, M., Island, J. O., Groenendijk, D. J., Blanter, S. I., Steele, G. A., van der Zant, H. S. J., & Castellanos-Gomez, A. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00106d · Cited by 1,051
Measurement of mobility in dual-gated MoS2 transistors
Fuhrer, M. S., & Hone, J. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.30 · Cited by 508
Metadata
- Authors
- Liu, H., & Ye, P. D.
- Venue
- IEEE Electron Device Letters
- Published
- 2012-04
- Volume
- 33
- Issue
- 4
- Pages
- 546-548
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W1581951628
- Cited by
- 415
- References
- 2
- FWCI
- 21.57
- Type
- journal article
- Language
- en
- Open access
- green
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- Liu, H., & Ye, P. D. (2012). $\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric. IEEE Electron Device Letters. https://doi.org/10.1109/led.2012.2184520
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