The DOI matches its Crossref record; 9 of the 9 references it cites were found in a registry or an index.
Measurement of mobility in dual-gated MoS2 transistors
Open accessAbstract
Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50 cm^2/Vs for few-layer MoS2[1, 2]. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50 cm^2/Vs for few-layer MoS2[1, 2]. However, greatly increased mobility - as high as 900 cm^2/Vs - was recently reported for monolayer MoS2 by Radisavljevic, et al.[Ref. 3; see also Refs. 4-6], and for multilayer MoS2 by others[7, 8], in devices covered by a high-kappa dielectric layer and a metal top gate. Similar increases were reported for electrolyte top-gated MoS2[9]. A puzzling common aspect of these reports is that the double-gated devices consistently show much higher mobility when measured using the weakly-coupled back gate (typically 300 nm of SiO2) than using the strongly-coupled top gate. While this difference might be attributed to a different quality of the top and bottom surfaces, the large discrepancy motivates close examination of the measurement techniques to rule out spurious effects. Notably, it has been shown that the mobility may be greatly overestimated in this geometry[10, 11]. There is good evidence that this is the case here[4-9]; below we discuss Radisavljevic, et al.[4] as an illustrative example.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., & Kis, A. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2010.279 · Cited by 14,939
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Integrated Circuits Based on Bilayer MoS2 Transistors
Wang, H., Yu, L., Lee, Y.-H., Shi, Y., Hsu, A., Chin, M. L., Li, L.-J., Dubey, M., Kong, J., & Palacios, T. (2012) · Nano Letters · doi:10.1021/nl302015v · Cited by 1,738
Integrated Circuits and Logic Operations Based on Single-Layer MoS2
Radisavljevic, B., Whitwick, M. B., & Kis, A. (2011) · ACS Nano · doi:10.1021/nn203715c · Cited by 1,338
Ayari, A., Cobas, E., Ogundadegbe, O., & Fuhrer, M. S. (2007) · Journal of Applied Physics · doi:10.1063/1.2407388 · Cited by 586
Self-citationLiu, H., & Ye, P. D. (2012) · IEEE Electron Device Letters · doi:10.1109/led.2012.2184520 · Cited by 415
Small-signal amplifier based on single-layer MoS2
Radisavljevic, B., Whitwick, M. B., & Kis, A. (2012) · Applied Physics Letters · doi:10.1063/1.4738986 · Cited by 205
Xia, J., Chen, F., Wiktor, P., et al. (2010) · Nano Letters · doi:10.1021/nl103306a · Cited by 74
Cited by
Recent development of two-dimensional transition metal dichalcogenides and their applications
Choi, W., Choudhary, N., Han, G. H., Park, J., Akinwande, D., & Lee, Y. H. (2017) · Materials Today · doi:10.1016/j.mattod.2016.10.002 · Cited by 2,769
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Schmidt, H., Giustiniano, F., & Eda, G. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00275c · Cited by 466
Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles
Li, X., Mullen, J. T., Jin, Z., Borysenko, K. M., Buongiorno Nardelli, M., & Kim, K. W. (2013) · Physical Review B · doi:10.1103/physrevb.87.115418 · Cited by 462
Sulfur vacancies in monolayer MoS2 and its electrical contacts
Liu, D., Guo, Y., Fang, L., & Robertson, J. (2013) · Applied Physics Letters · doi:10.1063/1.4824893 · Cited by 417
Metadata
- Authors
- Fuhrer, M. S., & Hone, J.
- Venue
- Nature Nanotechnology
- Published
- 2013-03
- Volume
- 8
- Issue
- 3
- Pages
- 146-147
- ISSN
- 1748-3387 (ISSN-L)
- 1748-3395
- OpenAlex
- W2093681061
- Cited by
- 508
- References
- 9
- FWCI
- 29.01
- Type
- journal article
- Language
- en
- Open access
- green
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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