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Molecular Doping of Multilayer ${\rm MoS}_{2}$ Field-Effect Transistors: Reduction in Sheet and Contact Resistances
Open accessAbstract
For the first time, polyethyleneimine (PEI) doping on multilayer MoS2field-effect transistors is investigated. A 2.6 times reduction in sheet resistance and 1.2 times reduction in contact resistance have been achieved. The enhanced electrical characteristics are also reflected in a 70% improvement in ON-current and 50% improvement in extrinsic field-effect mobility. The threshold voltage confirms a negative shift upon the molecular doping. All studies demonstrate the feasibility of PEI molecular doping in MoS2transistors and its potential applications in layer-structured semiconducting 2-D crystals.
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Cites
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
Cited by
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
Azcatl, A., Qin, X., Prakash, A., Zhang, C., Cheng, L., Wang, Q., Lu, N., Kim, M. J., Kim, J., Cho, K., et al. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b01853 · Cited by 491
Schmidt, H., Giustiniano, F., & Eda, G. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00275c · Cited by 466
Chuang, H.-J., Chamlagain, B., Koehler, M., Perera, M. M., Yan, J., Mandrus, D., Tománek, D., & Zhou, Z. (2016) · Nano Letters · doi:10.1021/acs.nanolett.5b05066 · Cited by 426
Ryder, C. R., Wood, J. D., Wells, S. A., & Hersam, M. C. (2016) · ACS Nano · doi:10.1021/acsnano.6b01091 · Cited by 283
Metadata
- Authors
- Du, Y., Liu, H., Neal, A. T., Si, M., & Ye, P. D.
- Venue
- IEEE Electron Device Letters
- Published
- 2013-10
- Volume
- 34
- Issue
- 10
- Pages
- 1328-1330
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2126919094
- Cited by
- 253
- References
- 3
- FWCI
- 11.25
- Type
- journal article
- Language
- en
- Open access
- green
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- Du, Y., Liu, H., Neal, A. T., Si, M., & Ye, P. D. (2013). Molecular Doping of Multilayer ${\rm MoS}_{2}$ Field-Effect Transistors: Reduction in Sheet and Contact Resistances. IEEE Electron Device Letters. https://doi.org/10.1109/led.2013.2277311
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