Effect of Alumina Buffers on the Stability of Top-Gate Amorphous InGaZnO Thin-Film Transistors on Flexible Substrates

Ok, Kyung-Chul; Oh, Saeroonter; Jeong, Hyun-Jun; Bae, Jong Uk; Park, Jin-Seong

doi:10.1109/led.2015.2461003

Cited by 45Thin-Film Transistor TechnologiesSemiconductor materials and devicesOrganic Electronics and Photovoltaics

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Effect of Alumina Buffers on the Stability of Top-Gate Amorphous InGaZnO Thin-Film Transistors on Flexible Substrates

Ok, Kyung-Chul, Oh, Saeroonter, Jeong, Hyun-Jun, Bae, Jong Uk, Park, Jin-Seong·2015·IEEE Electron Device Letters

DOI 10.1109/led.2015.2461003

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Abstract

Flexible top-gate amorphous InGaZnO thin-film transistors are fabricated on polyimide substrates. The effect of the alumina buffer layers on the device performance and stability is demonstrated using two types of atomic layer deposition reactant sources: 1) ozone and 2) water. Alumina buffers formed by water reactants have better barrier properties against the ambient than those formed by ozone. Furthermore, less charge trapping at sub-gap density-of-states occurs with higher film density of the buffer layer. Stability characteristics under negative bias temperature stress are enhanced by optimization of the buffer layer formation on flexible substrates.

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Authors: Ok, K.-C., Oh, S., Jeong, H.-J., Bae, J. U., & Park, J.-S.
Affiliations: Hanyang University (KR)
LG (South Korea) (KR)
ORCID: Oh, Saeroonter
Jeong, Hyun-Jun
Bae, Jong Uk
Park, Jin-Seong
Venue: IEEE Electron Device Letters
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Published: 2015-09
Volume: 36
Issue: 9
Pages: 917-919
ISSN: 0741-3106 (ISSN-L)
1558-0563
DOI: 10.1109/led.2015.2461003
OpenAlex: W1554779312
Cited by: 45
References: 14
Citations by year: 2026: 1 · 2025: 1 · 2024: 1 · 2023: 3 · 2022: 3 · 2021: 4 · 2020: 8 · 2019: 7 · 2018: 9 · 2017: 4 · 2016: 2 · 2015: 2
FWCI: 2.73
Type: journal article
Language: en
Open access: closed
Licence: ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html (vor)
Locations: IEEE Electron Device Letters (publishedVersion)
The Royal Society of Chemistry’s Journals, Books and Databases (The Royal Society of Chemistry) (submittedVersion)
Funders: Industry Technology Research and Development Program within the Ministry of Trade, Industry and Energy through the Korea Evaluation Institute of Industrial Technology (10051080)
LG Display Company, Ltd.
Ministry of Science, ICT and Future Planning through the Institute for Information and Communications Technology Promotion (10041416)
Topics: Physical Sciences › Engineering › Electrical and Electronic Engineering › Thin-Film Transistor Technologies
Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Physical Sciences › Engineering › Electrical and Electronic Engineering › Organic Electronics and Photovoltaics
Keywords: amorphous InGaZnO thin-film transistors, top-gate transistors, flexible substrates, polyimide substrate, atomic layer deposition, charge trapping, negative bias temperature instability, device stability

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Effect of Alumina Buffers on the Stability of Top-Gate Amorphous InGaZnO Thin-Film Transistors on Flexible Substrates

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