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Cited by 39Photonic and Optical DevicesAdvanced Semiconductor Detectors and MaterialsSemiconductor Lasers and Optical Devices

The DOI matches its Crossref record.

Heterogeneous Integration of GaInAsSb p-i-n Photodiodes on a Silicon-on-Insulator Waveguide Circuit

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Hattasan, Nannicha, Gassenq, Alban, Cerutti, Laurent, Rodriguez, Jean-Baptiste, Tournie, Eric, Roelkens, Gunther·2011·IEEE Photonics Technology Letters
DOI 10.1109/lpt.2011.2169244
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Abstract

We report the integration of GalnAsSb p-i-n photo diodes on a silicon-on-insulator waveguide circuit. The device operates with low dark current (1.13 μA at -0.1 V) at room temperature. A high responsivity of 0.44 A/W is measured at 2.29 μm. This yields 1.63 × 109cmHz1/2/W of Johnson-noise-limited-detectivity.

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Crossref · 10.1109/lpt.2011.2169244

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  • The WG-QDPD results are on par with the best-performing bonded III-V photodetectors reported in the literature (responsivity 0.4-1.4 A/W around 2.3 μm and dark current 10 nA-2.5 μA).

    “Notably, these results are on par with the best-performing bonded III-V photodetectors reported in the literature (responsivity 0.4-1.4 A/W around 2.3 μ m and dark current 10 nA-2.5 μ A), 6-9 outperforming monolithically grown GeSn (responsivity < 0.52 A/W and dark current > 1 mA). 13-16”

    From A silicon photonics waveguide-coupled colloidal quantum dot photodiode sensitive beyond 1.6 µ m (2024) · cites this paper as [7]

Citations

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No references could be resolved yet.

Research works printed but not linked: 14

  1. 10.1016/j.photonics.2004.07.002 · DOI
  2. 10.1002/pssb.200675623 · DOI
  3. 10.1149/1.2352045 · DOI · Paper page
  4. 10.1007/978-0-387-30420-5 · DOI
  5. prineas, 2008, Leakage mechanism and potential performance of molecular-beam epitaxially grown GaInAsSb 2.4 <formula formulatype="inline"> <tex Notation="TeX">$\mu\hbox{m}$</tex></formula> photodiode detectors, J Appl Phys, 103, 10.1063/1.2932080 · DOI
  6. 10.1166/jnn.2010.2032 · DOI
  7. 10.1016/j.jcrysgro.2008.12.009 · DOI
  8. 10.1109/LPT.2007.903767 · DOI
  9. 10.1002/lpor.200900033 · DOI
  10. vurgaftman, 2011, Band parameters for III–V compound semiconductors and their alloys, J Appl Phys, 89, 5816
  11. 10.1063/1.122399 · DOI
  12. 10.1063/1.3189814 · DOI
  13. 10.1007/s00340-007-2880-7 · DOI
  14. 10.1088/0268-1242/21/9/011 · DOI

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Metadata

Authors
Hattasan, N., Gassenq, A., Cerutti, L., Rodriguez, J.-B., Tournie, E., & Roelkens, G.
Affiliations
  • Ghent University (BE)
  • Centre National de la Recherche Scientifique (FR)
ORCID
Venue
IEEE Photonics Technology Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published
2011-12
Volume
23
Issue
23
Pages
1760-1762
ISSN
  • 1041-1135 (ISSN-L)
  • 1941-0174
DOI
10.1109/lpt.2011.2169244
OpenAlex
W2101973775
Cited by
39
References
0
Citations by year
2025: 1 · 2024: 3 · 2022: 2 · 2021: 5 · 2020: 3 · 2019: 3 · 2017: 3 · 2016: 3 · 2015: 3 · 2014: 3 · 2013: 3 · 2012: 6
FWCI
2.91
Type
journal article
Language
en
Open access
Licence
Locations
  • IEEE Photonics Technology Letters (publishedVersion)
  • Ghent University Academic Bibliography (Ghent University) (submittedVersion, other-oa)
  • HAL (submittedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
Keywords
GaInAsSb, PIN photodiode, heterogeneous integration, silicon-on-insulator waveguides, mid-infrared photodetection, dark current, responsivity, detectivity, silicon photonics

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