Electrostatic discharge (ESD)
Abstract
Electrostatic discharge (ESD) refers to the sudden transfer (discharge) of static charge between objects at different electrostatic potentials. ESD belongs to a family of electrical problems known as electrical overstress (EOS). ESD poses a serious threat to electronic devices, such as microcircuits, transistors, and diodes, and affects the operation of the systems that contain those devices. Most electronic companies regard all semiconductor devices as ESD sensitive because of the damage ESD can cause. For this reason, ESD is a major concern in the microelectronic and electronic industry in manufacture and testing. ESD concerns also exist in nonelectronic components such as disk drives, magnetic recording heads, and sensors. The article describes the causes of ESD, its damaging effects and how the effects can be prevented or minimized.
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Vulnerability to electrostatic discharge from a charged human operator or during machine-based assembly is a critical consideration for neural amplifier ICs, especially in dry environments.
“Vulnerability to an electrostatic discharge (ESD) from a charged human operator or during machine-based assembly processes is another critical consideration [33, 115]. This is a particularly serious problem when the amplifier IC is used in dry environments, such as in the operating theater or in dry climates.”
From Implantable neurotechnologies: a review of integrated circuit neural amplifiers (2016) · cites this paper as [115]
Static electric charges typically encountered can produce voltages above 25 kV, so proper ESD design and correct device handling procedures are still required.
“Although most ICs are designed to meet standard ESD specifications [3, 4], the static electric charges that are typically encountered may result in voltages higher than 25 kV [115], and hence proper ESD design of the ICs and correct device handling procedures are still required.”
From Implantable neurotechnologies: a review of integrated circuit neural amplifiers (2016) · cites this paper as [115]
Cites
Electrostatic discharge in semiconductor devices: an overview
Vinson, J. E., & Liou, J. J. (1998) · Proceedings of the IEEE · doi:10.1109/5.659493 · Cited by 160 · see citing works
Design for Electrostatic-Discharge (ESD) Protection in Telecommunications Products
Welsher, T. L., Blondin, T. J., Dangelmayer, G. T., et al. (1990) · AT&T Technical Journal · doi:10.1002/j.1538-7305.1990.tb00337.x · Cited by 15 · see citing works
Bell, K. A., & Pinkerton, A. S. (1992) · IEE Review · doi:10.1049/ir:19920021 · Cited by 1 · see citing works
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Implantable neurotechnologies: a review of integrated circuit neural amplifiers
Ng, K. A., Greenwald, E., Xu, Y. P., & Thakor, N. V. (2016) · Medical & Biological Engineering & Computing · doi:10.1007/s11517-015-1431-3 · Cited by 83 · see citing works
- Authors
- Sadiku, M. N. O., & Akujuobi, C. M.
- Affiliations
- Prairie View A&M University (US)
- ORCID
- Sadiku, M.N.O.
- Venue
- IEEE Potentials
- Published
- 2004-01
- Volume
- 23
- Issue
- 5
- Pages
- 39-41
- ISSN
- 0278-6648 (ISSN-L)
- 1558-1772
- OpenAlex
- W1991734107
- Cited by
- 24
- References
- 3
- Citations by year
- 2026: 1 · 2025: 2 · 2024: 2 · 2022: 4 · 2021: 1 · 2020: 2 · 2018: 2 · 2017: 1 · 2016: 1 · 2014: 1 · 2013: 1
- FWCI
- 0.98
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Potentials (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electrostatic Discharge in Electronics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electromagnetic Compatibility and Noise Suppression
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Keywords
- electrostatic discharge, electrical overstress, ESD damage, semiconductor devices, microcircuits, electrostatic discharge protection, electronic equipment reliability
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