The DOI matches its Crossref record; 14 of the 19 references it cites were found in a registry or an index.
In-Depth Analysis of Static Current Sharing of Hard-Paralleled 1.7kV 700A SiC MOSFET LinPak Power Modules
Abstract
This paper investigates the static current balancing of hard-paralleled SiC power modules in switched mode DC/AC voltage source converters. A comprehensive analytical model is derived that not only considers unequal resistances and partial self-inductances but also the effects of partial mutual inductances between the parallel paths and the return current path. The model is validated by means of 3D FEM simulations and used to derive the generalized requirements for balanced currents. The importance of the return path is particularly highlighted throughout the analysis. The insight gained is finally utilized to control the degree of current imbalance in a double pulse test setup employing hard-paralleled SiC LinPak modules by means of suitably modifying the underlaying circuit layout.
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Cites
Inductance Calculations in a Complex Integrated Circuit Environment
Ruehli, A. E. (1972) · IBM Journal of Research and Development · doi:10.1147/rd.165.0470 · Cited by 1,034
Paul, C. R. (2009) · Cited by 410
Switching current imbalance mitigation in power modules with parallel connected SiC MOSFETs
Bęczkowski, S., Jørgensen, A. B., Li, H., Uhrenfeldt, C., Dai, X., & Munk‐Nielsen, S. (2017) · European Conference on Power Electronics and Applications · doi:10.23919/epe17ecceeurope.2017.8099245 · Cited by 63
Kawase, D., Inaba, M., Horiuchi, K., & Saito, K. (2015) · PCIM Europe: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM Europe) · Cited by 29
Schnell, R., Hartmann, S., Truessel, D., Fischer, F., Baschnagel, A., & Rahimo, M. T. A. (2015) · PCIM Europe: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM Europe) · Cited by 28
Dynamic characterization of parallel-connected high-power IGBT modules
Chen, N., Chimento, F., Nawaz, M. I., & Wang, L. (2013) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2013.6647270 · Cited by 17
Electrical performance of a low inductive 3.3kV half bridge IGBT module
Buchholz, S. S., Wissen, M., & Schuetze, T. (2015) · Cited by 17
Weigel, J., Boehmer, J., Nagel, A., & Kleffel, R. (2017) · 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) · doi:10.23919/epe17ecceeurope.2017.8099203 · Cited by 14
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Research works printed but not linked: 4
- bayerer, 0, Parasitic Inductance Hindering Utilization of Power Devices, Proc CIPS, 1
- fink, 0, An Approach to Balancing the Switching Behavior of Paralleled IGBT-Modules Using a Differential-Mode Choke in a Gate-Control Loop, Proc PCIM-Asia, 1
- 2013, AN 5SYA 2098–00 Paralleling of IGBT Modules
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Cited by
Symmetric Circuit Layout With Decoupled Modular Switching Cells for Multiparalleled SiC mosfets
He, Y., Zhang, J., & Shao, S. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3245680 · Cited by 25
Rodrigues, R., Raheja, U., Zhang, Y., Cairoli, P., & Antoniazzi, A. (2021) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2021.3062591 · Cited by 13
Neira, S., Mathieson, R., Parker, M., Judge, P. D., & Finney, S. J. (2023) · European Conference on Power Electronics and Applications · doi:10.23919/epe23ecceeurope58414.2023.10264534 · Cited by 8
Experimental Insights into the MW Range Dual Active Bridge with Silicon Carbide Devices
Heinig, S., Siemaszko, D., Baumann, R., Hubatka, N., Klaeusler, M., Ruiz, R., Burkart, R. M., & Yuan, C.-M. (2022) · International Power Electronics Conference (IPEC) · doi:10.23919/ipec-himeji2022-ecce53331.2022.9806987 · Cited by 7
Self-citationRodrigues, R., Raheja, U., Zhang, Y., Cairoli, P., & Antoniazzi, A. (2020) · IEEE Industry Applications Society Annual Meeting (IAS) · doi:10.1109/ias44978.2020.9334797 · Cited by 2
Analysis on Static Current Sharing of N-Paralleled Silicon Carbide MOSFETs
He, Y., Wang, X., Zhang, J., Shao, S., Li, H., & Luo, C. (2021) · 2021 IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce47101.2021.9595666 · Cited by 6
Optimization of 1-MW Solar Inverter with 1.7-kV SiC MOSFET Module
Park, K.-B., Kieferndorf, F., Burkart, R. M., & Agostini, B. (2020) · 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) · doi:10.1109/wipdaasia49671.2020.9360277 · Cited by 3
Self-citation
Metadata
- Authors
- Burkart, R. M., Bahmani, A., Kieferndorf, F., Grecki, F., Park, K.-B., & Canales, F.
- Affiliations
- ABB (Switzerland) (CH)
- Venue
- 2019 20th International Symposium on Power Electronics (Ee)
- Publisher
- IEEE
- Published
- 2019-10
- Pages
- 1-6
- OpenAlex
- W2994351044
- Cited by
- 7
- References
- 19
- Citations by year
- 2023: 2 · 2022: 1 · 2021: 2 · 2020: 2
- FWCI
- 1.98
- Type
- conference paper
- Language
- en
- Open access
- closed
- Licence
- Locations
- International Symposium on Power Electronics (Ee) (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Multilevel Inverters and Converters
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced DC-DC Converters
- Keywords
- current sharing, SiC MOSFET, mutual inductance, self-inductance, return current path, current imbalance, analytical model, circuit layout, double pulse test
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