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Cited by 7Silicon Carbide Semiconductor TechnologiesMultilevel Inverters and ConvertersAdvanced DC-DC Converters

The DOI matches its Crossref record; 14 of the 19 references it cites were found in a registry or an index.

In-Depth Analysis of Static Current Sharing of Hard-Paralleled 1.7kV 700A SiC MOSFET LinPak Power Modules

Burkart, Ralph M., Bahmani, Amin, Kieferndorf, Frederick, Grecki, Filip, Park, Ki-Bum, Canales, Francisco·2019·2019 20th International Symposium on Power Electronics (Ee)

Abstract

This paper investigates the static current balancing of hard-paralleled SiC power modules in switched mode DC/AC voltage source converters. A comprehensive analytical model is derived that not only considers unequal resistances and partial self-inductances but also the effects of partial mutual inductances between the parallel paths and the return current path. The model is validated by means of 3D FEM simulations and used to derive the generalized requirements for balanced currents. The importance of the return path is particularly highlighted throughout the analysis. The insight gained is finally utilized to control the degree of current imbalance in a double pulse test setup employing hard-paralleled SiC LinPak modules by means of suitably modifying the underlaying circuit layout.

Overview

Integrity signals

Registry

Crossref · 10.1109/pee.2019.8923363

Cites

14 of 14 references verified0 citation errors · 0 not checkable

Statistics

Recomputing p-values needs the paper’s full text.

Verification

Claims the paper makes

This paper’s full text isn’t openly available, so its claims and self-check weren’t run. The registry and citation checks still apply.

Citations

Cites

Research works printed but not linked: 4

  1. bayerer, 0, Parasitic Inductance Hindering Utilization of Power Devices, Proc CIPS, 1
  2. fink, 0, An Approach to Balancing the Switching Behavior of Paralleled IGBT-Modules Using a Differential-Mode Choke in a Gate-Control Loop, Proc PCIM-Asia, 1
  3. 2013, AN 5SYA 2098–00 Paralleling of IGBT Modules
  4. hofstötter, 2017, Semikron AN 17–001 IGBT Modules in Parallel Operation with Central and Individual Driver Board

Cited by

See all 7

Metadata

Authors
Burkart, R. M., Bahmani, A., Kieferndorf, F., Grecki, F., Park, K.-B., & Canales, F.
Affiliations
ABB (Switzerland) (CH)
Venue
2019 20th International Symposium on Power Electronics (Ee)
Publisher
IEEE
Published
2019-10
Pages
1-6
OpenAlex
W2994351044
Cited by
7
References
19
Citations by year
2023: 2 · 2022: 1 · 2021: 2 · 2020: 2
FWCI
1.98
Type
conference paper
Language
en
Open access
closed
Locations
International Symposium on Power Electronics (Ee) (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Multilevel Inverters and Converters
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced DC-DC Converters
Keywords
current sharing, SiC MOSFET, mutual inductance, self-inductance, return current path, current imbalance, analytical model, circuit layout, double pulse test

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Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.