Student or educator? Sign up with your school email and get 6 months of Pro free.
CoChat
Sign Up
Cited by 6

The DOI matches its Crossref record.

Static Current Unbalance of Paralleled SiC MOSFET Modules in the Final Layout

Jauregi, Ander, Garrido, David, Baraia-Etxaburu, Igor, Garcia-Bediaga, Asier, Rujas, Alejandro·2020·2020 IEEE Vehicle Power and Propulsion Conference (VPPC)
DOI 10.1109/vppc49601.2020.9330969
Open this paper in CoChat — free account

Abstract

Silicon Carbide (SiC) MOSFETs enable enhanced performance of power converters in several applications. Parallel connection of SiC MOSFETs become mandatory for medium power applications due to the current rate of existing modules. A balanced current sharing between paralleled MOSFETs is desired to maximize the power capability of each device, maximizing the power capability of the whole system. This work studies the static current unbalance of two paralleled 1200V-400A SiC MOSFET modules with individual gate driver. Experimental measurements are done focused on parasitic inductance caused by electromechanical layout.

Overview

Integrity signals

Registry

Crossref · 10.1109/vppc49601.2020.9330969

Cites

Statistics

Recomputing p-values needs the paper’s full text.

Verification

Claims the paper makes

This paper’s full text isn’t openly available, so its claims and self-check weren’t run. The registry and citation checks still apply.

Claims other papers make about this one

Each is checked against this paper’s own text: does it say what the citing paper says it does?

Citations

Cites

No references could be resolved yet.

Research works printed but not linked: 16

  1. 10.1109/ECCE.2013.6646891 · DOI
  2. thalheim, 2003, Control strategies for balancing of series and parallel connected IGBT-diode modules
  3. niklas hofstötter, 2017, IGBT Modules in Parallel Operation with Central and Individual Driver Board, SemiKron Technical Report
  4. integrations, 0, 2SC0435T2H0-17 and 2SC0435T2H0C-17 Preliminary Datasheet Dual-Channel SCALE^{TM}-2+ IGBT and MOSFET Driver Core, Tech Rep
  5. 10.1109/TPEL.2013.2268058 · DOI
  6. 2013, Application Note 5SYA 2098-00. Paralleling of IGBT modules, Tech Rep
  7. 2019, BSM400D12P3G002: SiC Power Module Datasheet, Tech Rep
  8. 0, CAS300M17BM2 (Datasheet), Tech Rep
  9. electric, 0, FMF800DX2-24A (Datasheet), Tech Rep
  10. 10.1109/TPEL.2019.2954716 · DOI · Paper page
  11. 10.1109/TIE.2019.2901655 · DOI · Paper page
  12. 10.1109/TPEL.2015.2408054 · DOI · Paper page
  13. 2014, AN4381 Application note Current sharing in parallel diodes, Tech Rep
  14. sakaguchi, 2017, Characterization of 3.3 kv and 6.5 kv sic mosfets, PCIM Europe 2017 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management, 1
  15. 10.1109/TIE.2010.2072896 · DOI
  16. mao, 2017, Passive Balancing of Switching Transients between Paralleled SiC MOSFETs

Cited by

See all 6

Metadata

Authors
Jauregi, A., Garrido, D., Baraia-Etxaburu, I., Garcia-Bediaga, A., & Rujas, A.
Venue
2020 IEEE Vehicle Power and Propulsion Conference (VPPC)
Publisher
IEEE
Published
2020-11
Pages
1-5
DOI
10.1109/vppc49601.2020.9330969
Cited by
6
References
0
Licence

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review

How to cite

Cite CoChat for the checks on this page, and the paper for its own findings.

This page
CoChat. (2026). Citation check: Static Current Unbalance of Paralleled SiC MOSFET Modules in the Final Layout. https://app.cochat.ai/papers/10.1109/vppc49601.2020.9330969
The paper
Jauregi, A., Garrido, D., Baraia-Etxaburu, I., Garcia-Bediaga, A., & Rujas, A. (2020). Static Current Unbalance of Paralleled SiC MOSFET Modules in the Final Layout. 2020 IEEE Vehicle Power and Propulsion Conference (VPPC). https://doi.org/10.1109/vppc49601.2020.9330969

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.