The DOI matches its Crossref record.
Electromigration—A brief survey and some recent results
Abstract
Recently, electromigration has been identified as a potential wear-out failure mode for semiconductor devices employing metal film conductors of inadequate cross-sectional area. A brief survey of electromigration indicates that although the effect has been known for several decades, a great deal of the processes involved is still unknown, especially for complex metals and solute ions. Earlier design equations are improved to account for conductor film cross-sectional area as well as film structure, film temperature, and current density. Design curves are presented which permit the construction of high reliability "infinite life" aluminum conductors for specific conditions of maximum current and temperature stress expected in use. It is also shown that positive gradients, in terms of electron flow, of temperature, current density, or ion diffusion coefficient foreshorten conductor life because they present regions where vacancies condense to form voids.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cited by
Ho, P. S., & Kwok, T. (1989) · Reports on Progress in Physics · doi:10.1088/0034-4885/52/3/002 · Cited by 836
An overview of through-silicon-via technology and manufacturing challenges
Gambino, J. P., Adderly, S. A., & Knickerbocker, J. U. (2015) · Microelectronic Engineering · doi:10.1016/j.mee.2014.10.019 · Cited by 317
McPherson, J. W. (2018) · 2018 IEEE International Reliability Physics Symposium (IRPS) · doi:10.1109/irps.2018.8353556 · Cited by 24
Metadata
- Authors
- Black, J. R.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 1969-04
- Volume
- 16
- Issue
- 4
- Pages
- 338-347
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2007719944
- Cited by
- 1,506
- References
- 0
- FWCI
- 12.11
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Electromigration—A brief survey and some recent results. https://app.cochat.ai/papers/10.1109/t-ed.1969.16754
- The paper
- Black, J. R. (1969). Electromigration—A brief survey and some recent results. IEEE Transactions on Electron Devices. https://doi.org/10.1109/t-ed.1969.16754
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
