The DOI matches its Crossref record; 11 of the 11 references it cites were found in a registry or an index.
Hot-electron-induced photon and photocarrier generation in Silicon MOSFET's
Abstract
The phenomenon of and the physical mechanisms for the generation of minority carriers in the substrate of NMOS and CMOS are studied. Secondary impact ionization is not responsible. The responsible mechanisms are hot-electron-induced photocarrier generation and, under extreme conditions, forward biasing of the source-substrate junction. The photon generation is believed to be due to the bremsstrahlung of the channel hot electrons. A theoretical model based on the lucky electron concept and the bremsstrahlung mechanism is proposed. The calculated characteristics of photon generation agree well with experimental results. About 2 × 10-5photogenerated minority carriers are generated for every (primary) impact-ionization event in NMOSFET. Photocarrier-induced leakage current can be fitted with either an inverse square dependence on distance or an exponential dependence with an effective decay length of about 780 µm.
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Citations
Cites
The physics of semiconductor devices
Rediker, R. H. (1970) · Solid-State Electronics · doi:10.1016/0038-1101(70)90165-6 · Cited by 1,616
Problems related to p-n junctions in silicon
Shockley, W. (1961) · Solid-State Electronics · doi:10.1016/0038-1101(61)90054-5 · Cited by 923
Measurement of the ionization rates in diffused silicon p-n junctions
Van Overstraeten, R., & De Man, H. (1970) · Solid-State Electronics · doi:10.1016/0038-1101(70)90139-5 · Cited by 840
TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
Crowell, C. R., & Sze, S. M. (1966) · Applied Physics Letters · doi:10.1063/1.1754731 · Cited by 458
Electron and hole ionization rates in epitaxial silicon at high electric fields
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Scattering of Conduction Electrons by Lattice Vibrations in Silicon
Long, D. (1960) · Physical Review · doi:10.1103/physrev.120.2024 · Cited by 262
A numerical model of avalanche breakdown in MOSFET's
Toyabe, T., Yamaguchi, K., Asai, S., et al. (1978) · IEEE Transactions on Electron Devices · doi:10.1109/t-ed.1978.19179 · Cited by 155
An analytical breakdown model for short-channel MOSFET's
Hsu, F.-C., Ko, P. K., Tam, S. M., Hu, C. C., & Muller, R. S. (1982) · IEEE Transactions on Electron Devices · doi:10.1109/t-ed.1982.21018 · Cited by 131
Self-citationLucky-electron model of channel hot electron emission
Hu, C. C. (1979) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.1979.189529 · Cited by 119
Self-citationMechanism for reverse-biased breakdown radiation in p-n junctions
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Cited by
A single-transistor silicon synapse
Diorio, C., Hasler, P., Minch, A., & Mead, C. A. (1996) · IEEE Transactions on Electron Devices · doi:10.1109/16.543035 · Cited by 360
A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs
Modolo, N., De Santi, C., Minetto, A., Sayadi, L., Sicre, S., Prechtl, G., Meneghesso, G., Zanoni, E., & Meneghini, M. (2021) · IEEE Electron Device Letters · doi:10.1109/led.2021.3067796 · Cited by 48
Metadata
- Authors
- Tam, S., & Hu, C.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 1984-09
- Volume
- 31
- Issue
- 9
- Pages
- 1264-1273
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2039518657
- Cited by
- 314
- References
- 11
- FWCI
- 4.53
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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