A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs

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Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

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ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model

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Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

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Lucky-electron model of channel hot electron emission

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Velocity saturation in the extrinsic device: a fundamental limit in HFET's

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Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress

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Deep Levels Characterization in GaN HEMTs—Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy

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A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs

Modolo, N., Tang, S., Jiang, H.-J., Santi, C. D., Meneghini, M., & Wu, T. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.2992587 · Cited by 62

Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications

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Modeling of source/drain access resistances and their temperature dependence in GaN HEMTs

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Simulation of hot-electron trapping and aging of nMOSFETs

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Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

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Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer

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Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors

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A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects

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GaN-based power devices: Physics, reliability, and perspectives

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Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

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Stability, Reliability, and Robustness of GaN Power Devices: A Review

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I G- and V GS-Dependent Dynamic R ON Characterization of Commercial High-Voltage p-GaN Gate Power HEMTs

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Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation

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Trap-state mapping to model GaN transistors dynamic performance

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Cumulative Hot-Electron Trapping in GaN-Based Power HEMTs Observed by an Ultrafast (10 V/Ns) On-Wafer Methodology

Modolo, N., Santi, C. D., Minetto, A., Sayadi, L., Sicre, S. B. F., Prechtl, G., Meneghesso, G., Zanoni, E., & Meneghini, M. (2021) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2021.3077127 · Cited by 33

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

Fregolent, M., Piva, F., Buffolo, M., Santi, C. D., Cester, A., Higashiwaki, M., Meneghesso, G., Zanoni, E., & Meneghini, M. (2024) · Journal of Physics D Applied Physics · doi:10.1088/1361-6463/ad5b6c · Cited by 31

Study of the Short-Circuit Capability and Device Instability of p-GaN Gate HEMTs by Repetitive Short-Circuit Stress

Yang, N., Pan, C., Wu, Z., Bai, P., Chen, K., Zhu, L., Zhou, C., Zhang, B., & Zhou, Q. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3332663 · Cited by 25

In-situ R DS(on) Characterization and Lifetime Projection of GaN HEMTs Under Repetitive Overvoltage Switching

Zhang, R., Garcia, R., Strittmatter, R., Zhang, Y., & Zhang, S. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3290117 · Cited by 23

Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

Chen, J., Huang, W., Qu, H., Zhang, Y., Zhou, J., Chen, B., & Zou, X. (2022) · Applied Physics Letters · doi:10.1063/5.0083362 · Cited by 22

Hot electron effects in AlGaN/GaN HEMTs during hard-switching events

Minetto, A., Modolo, N., Meneghini, M., Zanoni, E., Sayadi, L., Sicre, S. B. F., Deutschmann, B., & Häberlen, O. D. (2021) · Microelectronics Reliability · doi:10.1016/j.microrel.2021.114208 · Cited by 17

Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

Modolo, N., Fregolent, M., Masin, F., Benato, A., Bettini, A., Buffolo, M., De Santi, C., Borga, M., Posthuma, N., Bakeroot, B., et al. (2022) · Microelectronics Reliability · doi:10.1016/j.microrel.2022.114708 · Cited by 16

Charge Trapping in GaN Power Transistors: Challenges and Perspectives

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Positive VTH Shift in Schottky p-GaN Gate Power HEMTs: Dependence on Temperature, Bias and Gate Leakage

Modolo, N., Santi, C. D., Sicre, S. B. F., Minetto, A., Meneghesso, G., Zanoni, E., & Meneghini, M. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2024.3368506 · Cited by 11

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

Zagni, N., Fregolent, M., Fiol, A. D., Favero, D., Bergamin, F., Verzellesi, G., Santi, C. D., Meneghesso, G., Zanoni, E., Huber, C., et al. (2024) · Journal of Semiconductors · doi:10.1088/1674-4926/45/3/032501 · Cited by 11

Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-μm AlGaN/GaN HEMTs for Power RF Applications

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Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors

Zagni, N., Fregolent, M., Verzellesi, G., Marcuzzi, A., Santi, C. D., Meneghesso, G., Zanoni, E., Treidel, E. B., Brusaterra, E., Brunner, F., et al. (2023) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2023.3335032 · Cited by 10

Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices

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GaN-on-Si Power HEMTs for Automotive: Current Status and Perspectives

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Aging Reliability Compact Modeling of Trap Effects in Power GaN HEMTs

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Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress

Liang, Y., Duan, J., Zhang, P., Low, K. L., Zhang, J., & Liu, W. (2024) · Nanomaterials · doi:10.3390/nano14181529 · Cited by 8

Modeling Hot-Electron Trapping in GaN-based HEMTs

Modolo, N., Santi, C. D., Minetto, A., Sayadi, L., Sicre, S. B. F., Prechtl, G., Meneghesso, G., Zanoni, E., & Meneghini, M. (2022) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps48227.2022.9764414 · Cited by 7

Evidence‐Based Understanding of Lateral Hole Transport During OFF‐State Stress Completing Dynamic GaN‐on‐Si Buffer Charging Model

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Investigation of the long-term dynamic RDS(on) variation and dynamic high temperature operating life test robustness of Schottky gate and ohmic gate GaN HEMT with comparable stress conditions

Rauf, F., Tayyab, M. F., Mouhoubi, S., Heldwein, M. L., & Curatola, G. (2025) · Microelectronics Reliability · doi:10.1016/j.microrel.2025.115708 · Cited by 6

Observations and Physical Insights Into Time-Dependent Hot Electron Current Confinement in AlGaN/GaN HEMTs on C-Doped GaN Buffer

Chaudhuri, R. R., Joshi, V., Gupta, S. D., & Shrivastava, M. (2022) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2022.3213627 · Cited by 6

Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic R ON Behavior in AlGaN/GaN HEMTs—Part II

Chaudhuri, R. R., Gupta, A., Joshi, V., Malik, R. R., Gupta, S. D., & Shrivastava, M. (2023) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2023.3300652 · Cited by 6

Impact of high-temperature operating lifetime tests on the stability of 0.15 μm AlGaN/GaN HEMTs: A temperature-dependent analysis

Pilati, M., Buffolo, M., Rampazzo, F., Lambert, B., Sommer, D., Grünenpütt, J., Santi, C. D., Meneghesso, G., Zanoni, E., & Meneghini, M. (2023) · Microelectronics Reliability · doi:10.1016/j.microrel.2023.115131 · Cited by 5

Dynamic R ON Degradation in AlGaN/GaNMIS-HEMTs With Si 3 N 4 or Si 3 N 4 /ZrO 2 Passivation Layer

Liang, Y., Zhang, Y., He, X., Zhao, Y., Yan, J. D., Wang, M., & Liu, W. (2024) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2024.3372933 · Cited by 5

Self-Calibrating TSEP for Junction Temperature and RUL Prediction in GaN HEMTs

Cui, Y., Gan, Y., Wen, K., Jiang, Y., Chen, C.-Z., Wang, Q., & Yu, H. (2025) · Nanomaterials · doi:10.3390/nano15141102 · Cited by 4

Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic R on Behavior in AlGaN/GaN HEMTs—Part I

Chaudhuri, R. R., Gupta, A., Joshi, V., Malik, R. R., Gupta, S. D., & Shrivastava, M. (2023) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2023.3323439 · Cited by 4

On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach

Boito, M., Fregolent, M., Santi, C. D., Abbisogni, A., Smerzi, S. A., Rossetto, I., Iucolano, F., Meneghesso, G., Zanoni, E., & Meneghini, M. (2024) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps48228.2024.10529407 · Cited by 4

Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs

Zagni, N., Fregolent, M., Verzellesi, G., Bergamin, F., Favero, D., Santi, C. D., Meneghesso, G., Zanoni, E., Huber, C., Meneghini, M., et al. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2024.3441712 · Cited by 4

In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication

Yang, Y., Fan, R., Zhang, P., Wang, L., Pan, M., Wang, Q., Xie, X., Xu, S., Wang, C., Wu, C., et al. (2023) · Micromachines · doi:10.3390/mi14071278 · Cited by 3

Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques

Fregolent, M., Marcuzzi, A., Santi, C. D., Treidel, E. B., Meneghesso, G., Zanoni, E., & Meneghini, M. (2023) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps48203.2023.10117719 · Cited by 3

Hot-Electron Hardening in GaN-based Power Devices by Selective p-GaN Gate Epitaxy

Chen, H., Tang, J., Chen, J., Liu, J., Ye, S., Zhao, J., Liu, Z., Ma, J., Sun, Q., & Hua, M. (2025) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm50572.2025.11353527 · Cited by 2

A Circuit for Evaluating GaN HEMT Dynamic Rds(on) at Cryogenic Temperatures

Shi, C. ‐. R., Lo, S., Thrimawithana, D. J., Adams, F., Wadsworth, A., Pearce, M. G. S., Oliver, R. A., Wallis, D. J., & Badcock, R. A. (2024) · IEEE Annual Southern Power Electronics Conference · doi:10.1109/spec62217.2024.10893110 · Cited by 2

2021 Index IEEE Electron Device Letters Vol. 42

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Impact of Gate and Drain Leakage on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs

Cioni, M., Giorgino, G., Chini, A., Parisi, A., Cappellini, G., Modica, L., Luongo, G., Miccoli, C., Castagna, M. E., Moschetti, M., et al. (2023) · AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE) · doi:10.23919/aeitautomotive58986.2023.10217244 · Cited by 1

Evidence for 2D Hole Gas in GaN Gate Injection Transistors and its Role in RDson Recovery

Ruch, B., Chaudhuri, R. R., Butej, B., Gomes, J. L., Stabentheiner, M., Reiser, K., Koller, C., Pogany, D., Ostermaier, C., & Waltl, M. (2025) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps48204.2025.10983056 · Cited by 1

An Approach to Extract the Trap States via the Dynamic Ron Method With Substrate Voltage Applied During the Recovery Time

Lee, Y.-H., Chen, P., Zhang, Y., Wu, C., Chou, S., Wang, Y., Kuo, H.-M., Lin, Y., Chen, Y., Tsai, Y.-J., et al. (2024) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2024.3467038 · Cited by 1

Dynamic Threshold Voltage Extraction for GaN HEMT via a Source-Series-Connected Capacitor

Ji, W., Wang, Y., Zhao, Z., Wu, Z., Zhan, H., Fan, L., Chen, Z., Luo, Z., Luo, T., Wu, Q., et al. (2025) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.23919/ispsd62843.2025.11118019

Effective control of active interface traps in GaN HEMT epitaxial layers by stress tuning of SiN x passivation layers

Chevtchenko, S. A., Brusaterra, E., Ostermay, I., Sudau, D., & Hilt, O. (2025) · Semiconductor Science and Technology · doi:10.1088/1361-6641/ae03e5

Understanding Forward and Reverse Overcurrent-Induced Electrical Parameter Degradations of Cascode GaN HEMTs

Lu, W., Li, S., Ma, Y., Li, M., Ma, J., Ye, R., Wei, J., Zhang, L., Wu, L., Li, Y., et al. (2026) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2026.3660058

Hot-Electron Hardening in GaN-Based Power Devices by Selective p-GaN Gate Epitaxy

Chen, H., Tang, J., Chen, J., Liu, J., Ye, S., Zhao, J., Liu, Z., Ma, J., Sun, Q., & Hua, M. (2026) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2026.3664325

Analysis of robustness of 650 V GaN HEMT under repetitive short-circuits

Lambert, A. (2025) · doi:10.70675/dfbb85bcz1b8cz471fzbdabza09204e66390

Dynamic on-State Breakdown of GaN-on-Si HEMT

Yu, H., Gupta, A., Kuo, Y.-C., Chong, Y., Wu, T. N., Yadav, S., ElKashlan, R., Banerjee, S., Hahn, H., Mauder, C., et al. (2026) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps61424.2026.11499284

Physics and improvement of dynamic RON in GaN power HEMTs: A comprehensive review

Chen, X., Wang, F., & Wang, Z. (2026) · Micro and Nanostructures · doi:10.1016/j.micrna.2026.208811

Modeling Hot-Electron Trapping in GaN-based HEMTs

Modolo, N., Santi, C. D., Minetto, A., Sayadi, L., Sicre, S. B. F., Prechtl, G., Meneghesso, G., Zanoni, E., & Meneghini, M. (2022) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps48227.2022.9764414 · Cited by 7

Cumulative Hot-Electron Trapping in GaN-Based Power HEMTs Observed by an Ultrafast (10 V/Ns) On-Wafer Methodology

Modolo, N., Santi, C. D., Minetto, A., Sayadi, L., Sicre, S. B. F., Prechtl, G., Meneghesso, G., Zanoni, E., & Meneghini, M. (2021) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2021.3077127 · Cited by 33

Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress

Sozza, A., Dua, C., Morvan, E., diForte-Poisson, M. A., Delage, S. L., Rampazzo, F., Tazzoli, A., Danesin, F., Meneghesso, G., Zanoni, E., et al. (2006) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2005.1609416 · Cited by 87

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Joh, J., & del Alamo, J. A. (2010) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2010.2087339 · Cited by 441

Modeling of trapping effects in GaN HEMTs

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