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Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials
Abstract
A detailed investigation of the time evolution for the low-field resistance R/sub off/ and the threshold voltage V/sub th/ in chalcogenide-based phase-change memory devices is presented. It is observed that both R/sub off/ and V/sub th/ increase and become stable with time and temperature, thus improving the cell readout window. Relying on a microscopic model, the drift of R/sub off/ and V/sub th/ is linked to the dynamic of the intrinsic traps typical of amorphous chalcogenides, thus providing for the first time a unified framework for the comprehension of chalcogenide materials transient behavior.
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Cited by
Phase change memory technology
Burr, G. W., Breitwisch, M. J., Franceschini, M., Garetto, D., Gopalakrishnan, K., Jackson, B., Kurdi, B., Lam, C., Lastras, L. A., Padilla, A., et al. (2010) · Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena · doi:10.1116/1.3301579 · Cited by 916
Chakraborty, I., Ali, M., Ankit, A., Jain, S., Roy, S., Sridharan, S., Agrawal, A., Raghunathan, A., & Roy, K. (2020) · Proceedings of the IEEE · doi:10.1109/jproc.2020.3003007 · Cited by 140
Programming algorithms for multilevel phase-change memory
Papandreou, N., Pozidis, H., Pantazi, A., Sebastian, A., Breitwisch, M., Lam, C., & Eleftheriou, E. (2011) · 2011 IEEE International Symposium of Circuits and Systems (ISCAS) · doi:10.1109/iscas.2011.5937569 · Cited by 124
Statistics of Resistance Drift Due to Structural Relaxation in Phase-Change Memory Arrays
Boniardi, M., Ielmini, D., Lavizzari, S., Lacaita, A. L., Redael, A., & Pirovano, A. (2010) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2010.2058771 · Cited by 106
Self-citationLavizzari, S., Ielmini, D., Sharma, D., & Lacaita, A. L. (2009) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2009.2016398 · Cited by 74
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Metadata
- Authors
- Pirovano, A., Lacaita, A. L., Pellizzer, F., Kostylev, S. A., Benvenuti, A., & Bez, R.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2004-05
- Volume
- 51
- Issue
- 5
- Pages
- 714-719
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2136683769
- Cited by
- 377
- References
- 0
- FWCI
- 6.87
- Type
- journal article
- Language
- en
- Open access
- closed
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- Pirovano, A., Lacaita, A. L., Pellizzer, F., Kostylev, S. A., Benvenuti, A., & Bez, R. (2004). Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2004.825805
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