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Surface-Related Drain Current Dispersion Effects in AlGaN–GaN HEMTs
Open accessAbstract
Drain current dispersion effects are investigated in AlGaN-GaN HEMTs by means of pulsed, transient, and small-signal measurements. Gate- and drain-lag effects characterized by time constants in the order of 10/sup -5/-10/sup -4/ s cause dispersion between dc and pulsed output characteristics when the gate or the drain voltage are pulsed. An activation energy of 0.3 eV is extracted from temperature-dependent gate-lag measurements. We show that two-dimensional numerical device simulations accounting only for polarization charges and donor-like traps at the ungated AlGaN surface can quantitatively reproduce all dispersion effects observed experimentally in the different pulsing modes, provided that the measured activation energy is adopted as the energetic distance of surface traps from the valence-band edge. Within this hypothesis, simulations show that surface traps behave as hole traps during transients, interacting with holes attracted at the AlGaN surface by the negative polarization charge.
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Cited by
The 2018 GaN power electronics roadmap
Amano, H., Baines, Y., Beam, E., Borga, M., Bouchet, T., Chalker, P. R., Charles, M., Chen, K. J., Chowdhury, N., Chu, R., et al. (2018) · Journal of Physics D: Applied Physics · doi:10.1088/1361-6463/aaaf9d · Cited by 1,313
Self-citationGaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Self-citationA Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors
Joh, J., & del Alamo, J. A. (2011) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2010.2087339 · Cited by 441
Metadata
- Authors
- Meneghesso, G., Verzellesi, G., Pierobon, R., Rampazzo, F., Chini, A., Mishra, U. K., Canali, C., & Zanoni, E.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2004-10
- Volume
- 51
- Issue
- 10
- Pages
- 1554-1561
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2163194368
- Cited by
- 330
- References
- 0
- FWCI
- 10.70
- Type
- journal article
- Language
- en
- Open access
- green
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- Meneghesso, G., Verzellesi, G., Pierobon, R., Rampazzo, F., Chini, A., Mishra, U. K., Canali, C., & Zanoni, E. (2004). Surface-Related Drain Current Dispersion Effects in AlGaN–GaN HEMTs. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2004.835025
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